Microchip Technology, Inc. 1200V Silicon Carbide (SiC) MOSFET MOSFET-SIC-1200V

Description
MOSFET-SiC-1200V is part of our newest family of SiC MOSFET devices. Microchip's SiC solutions focus on high performance helping to maximize system efficiency and minimize system weight and size. Microchip's proven SiC reliability also ensures no performance degradation over the life of the end equipment. Additional Features Low capacitances and low gate charge Fast switching speed due to low internal gage resistance (ESR) Stable operation at high junction temperature at 175 degrees Celsius Fast and reliable body diode Superior avalanche ruggedness RoHS Compliant
Datasheet
Description
MOSFET-SiC-1200V is part of our newest family of SiC MOSFET devices. Microchip's SiC solutions focus on high performance helping to maximize system efficiency and minimize system weight and size. Microchip's proven SiC reliability also ensures no performance degradation over the life of the end equipment. Additional Features Low capacitances and low gate charge Fast switching speed due to low internal gage resistance (ESR) Stable operation at high junction temperature at 175 degrees Celsius Fast and reliable body diode Superior avalanche ruggedness RoHS Compliant
Datasheet

Suppliers

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Supplier Links
1200V Silicon Carbide (SiC) MOSFET - MOSFET-SIC-1200V - Microchip Technology, Inc.
Chandler, AZ, United States
1200V Silicon Carbide (SiC) MOSFET
MOSFET-SIC-1200V
1200V Silicon Carbide (SiC) MOSFET MOSFET-SIC-1200V
MOSFET-SiC-1200V is part of our newest family of SiC MOSFET devices. Microchip's SiC solutions focus on high performance helping to maximize system efficiency and minimize system weight and size. Microchip's proven SiC reliability also ensures no performance degradation over the life of the end equipment. Additional Features Low capacitances and low gate charge Fast switching speed due to low internal gage resistance (ESR) Stable operation at high junction temperature at 175 degrees Celsius Fast and reliable body diode Superior avalanche ruggedness RoHS Compliant

MOSFET-SiC-1200V is part of our newest family of SiC MOSFET devices. Microchip's SiC solutions focus on high performance helping to maximize system efficiency and minimize system weight and size. Microchip's proven SiC reliability also ensures no performance degradation over the life of the end equipment.

Additional Features

  • Low capacitances and low gate charge
  • Fast switching speed due to low internal gage resistance (ESR)
  • Stable operation at high junction temperature at 175 degrees Celsius
  • Fast and reliable body diode
  • Superior avalanche ruggedness
  • RoHS Compliant
Supplier's Site Datasheet

Technical Specifications

  Microchip Technology, Inc.
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number MOSFET-SIC-1200V
Product Name 1200V Silicon Carbide (SiC) MOSFET
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