The MSC180SMA120S is a 1200 V, 180 mΩ silicon carbide N-channel power MOSFET in a TO-268 (D3PAK) package, designed for high-efficiency applications such as PV inverters, electric vehicle chargers, and industrial motor drives. It supports a maximum junction temperature of 175 °C, has a continuous drain current of 21 A at 25 °C, and a junction-to-case thermal resistance of 0.79 to 1.18 °C/W. The device features low gate charge, fast switching, and built-in avalanche ruggedness, eliminating the need for an external freewheeling diode. It is RoHS compliant.
MOSFET-SiC-1200V is part of our newest family of SiC MOSFET devices. Microchip's SiC solutions focus on high performance helping to maximize system efficiency and minimize system weight and size. Microchip's proven SiC reliability also ensures no performance degradation over the life of the end equipment.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | MOSFET-SIC-1200V |
| Product Name | 1200V Silicon Carbide (SiC) MOSFET |
