Microchip Technology, Inc. 1200V MOSFET MOSFET-1200V

Description
Power MOS 7®is a family of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON)and Qg. Power MOS 7®combines lower conduction and switching lossesalong with exceptionally fast switching speeds Additional Features Power Semiconductors, Power Modules and RF Power MOSFETs Catalog Eliminating Parasitic Oscillation between Parallel MOSFETs High Frequency Resonant Half Bridge Improved Power MOSFETS Boost Efficiency IN A 3.5kw Single Phase PFC Introduction to MOSFETs Latest Technology PT IGBTs vs. Power MOSFETs Making Use of Gate Charge Information In MOSFET and IGBT Data Sheets Optimizing MOSFET and IGBT Gate Current to Minimize dv/dt Induced Failures in SMPS Circuits Turn Off Snubber Design for High Frequency Modules VDS(on) VCE(sat) Measurement
Datasheet
Description
Power MOS 7®is a family of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON)and Qg. Power MOS 7®combines lower conduction and switching lossesalong with exceptionally fast switching speeds Additional Features Power Semiconductors, Power Modules and RF Power MOSFETs Catalog Eliminating Parasitic Oscillation between Parallel MOSFETs High Frequency Resonant Half Bridge Improved Power MOSFETS Boost Efficiency IN A 3.5kw Single Phase PFC Introduction to MOSFETs Latest Technology PT IGBTs vs. Power MOSFETs Making Use of Gate Charge Information In MOSFET and IGBT Data Sheets Optimizing MOSFET and IGBT Gate Current to Minimize dv/dt Induced Failures in SMPS Circuits Turn Off Snubber Design for High Frequency Modules VDS(on) VCE(sat) Measurement
Datasheet

Suppliers

Company
Product
Description
Supplier Links
1200V MOSFET - MOSFET-1200V - Microchip Technology, Inc.
Chandler, AZ, United States
1200V MOSFET
MOSFET-1200V
1200V MOSFET MOSFET-1200V
Power MOS 7®is a family of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON)and Qg. Power MOS 7®combines lower conduction and switching lossesalong with exceptionally fast switching speeds Additional Features Power Semiconductors, Power Modules and RF Power MOSFETs Catalog Eliminating Parasitic Oscillation between Parallel MOSFETs High Frequency Resonant Half Bridge Improved Power MOSFETS Boost Efficiency IN A 3.5kw Single Phase PFC Introduction to MOSFETs Latest Technology PT IGBTs vs. Power MOSFETs Making Use of Gate Charge Information In MOSFET and IGBT Data Sheets Optimizing MOSFET and IGBT Gate Current to Minimize dv/dt Induced Failures in SMPS Circuits Turn Off Snubber Design for High Frequency Modules VDS(on) VCE(sat) Measurement

Power MOS 7®is a family of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON)and Qg. Power MOS 7®combines lower conduction and switching lossesalong with exceptionally fast switching speeds

Additional Features

    • Power Semiconductors, Power Modules and RF Power MOSFETs Catalog
    • Eliminating Parasitic Oscillation between Parallel MOSFETs
    • High Frequency Resonant Half Bridge
    • Improved Power MOSFETS Boost Efficiency IN A 3.5kw Single Phase PFC
    • Introduction to MOSFETs
    • Latest Technology PT IGBTs vs. Power MOSFETs
    • Making Use of Gate Charge Information In MOSFET and IGBT Data Sheets
    • Optimizing MOSFET and IGBT Gate Current to Minimize dv/dt Induced Failures in SMPS Circuits
    • Turn Off Snubber Design for High Frequency Modules
    • VDS(on) VCE(sat) Measurement
Supplier's Site Datasheet

Technical Specifications

  Microchip Technology, Inc.
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number MOSFET-1200V
Product Name 1200V MOSFET
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