The APT1001R1BNG is a 1000V N-channel enhancement mode power MOSFET in a TO-247 package, rated for 10.5A continuous drain current and 310W total power dissipation at 25°C. It has a drain-source on-state resistance of 1.10 ohms at VGS = 10V, a gate threshold voltage range of 2 to 4 volts, and a junction-to-case thermal resistance of 0.40°C/W. The device operates from -55°C to 150°C, with an input capacitance of 2460 to 2950 pF, and includes a body diode with reverse recovery time up to 1200 ns. Its safe operating area supports 310W at 1 second.
Power MOS 8™ is a family of high speed, high voltage (500-1200 V) N-channel switch-mode power transistors with lower EMI characteristics and lower cost compared to previous generation devices. These MOSFETs / FREDFETs have been optimized for both hard and soft switching in high frequency, high voltage applications rated above 500 W.
The Power MOS 8™ series is a result of extensive research into quiet switching. Input and reverse transfer capacitance values as well as their ratio were set at specific values to achieve quiet switching with minimal switching loss. The Power MOS 8™ series of devices are inherently quiet switching, stable when connected in parallel, very efficient, and lower cost than previous generations.
Power MOS 7® is a family of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON)and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally fast switching speeds.
Power MOS V® can still provide the best trade-off between performance and cost in some applications. Power MOS V® utilizes a low resistance aluminum metal gate structure. This allows for faster gate signal propagation than is possible with conventional polysilicon gate structures. The result is extremely low internal chip equivalent gate resistances (EGR) that are up to an order of magnitude lower than competitive devices which enables uniform high speed switching across the entire chip.
Body Diode Options
MOSFETs and FREDFETs are available in all voltage ratings. A FREDFET is a MOSFET with a faster recovery intrinsic body diode. This results in improved reliability in ZVS circuits due to shorter minority carrier lifetime and increased commutation dv/dt ruggedness. If a fast recovery body diode is not needed, MOSFET versions are available.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | MOSFET-1000V |
| Product Name | 1000V MOSFET |
