Radiation-hardened PNP silicon switching transistor in a surface-mount UB package, rated for 60 V collector-emitter voltage, 600 mA collector current, and 500 mW power dissipation at 25°C. Operating and storage junction temperature range is -65°C to +200°C. Thermal resistance junction-to-ambient is 325°C/W. Qualified per MIL-PRF-19500/255 with radiation tolerance up to 100 krad(Si) for JANTXVR and JANSU variants. Package dimensions comply with TO-18 form factor for through-hole and specified surface-mount layouts for UB versions.
Bipolar (BJT) Transistor PNP 60V 600mA 500mW Surface Mount UB
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 150-MNS2N2907AUBP/TR-ND |
| Product Name | Single Bipolar Transistors |
| Polarity | PNP |
