Microchip Technology, Inc. 4-Terminal P-Channel MOSFET High-Side Switch MIC94030

Description
The MIC94030 and MIC94031 are 4-terminal silicon gate P-channel MOSFETs that provide low on-resistance in a very small package. Designed for high-side switch applications where space is critical, the MIC94030/1 exhibits an on-resistance of typically 0.75Ω at 4.5V gate-to-source voltage. The MIC94030/1 also operates with only 2.7V gate-to-source voltage. The MIC94030 is the basic 4-lead P-channel MOSFET. The MIC94031 is a variation that includes an internal gate pull-up resistor that can reduce the system parts count in many applications. The 4-terminal SOT-143 package permits a substrate connection separate from the source connection. This 4-terminal configuration improves the θJA (improved heat dissipation) and makes analog switch applications practical. The small size, low threshold, and low RDS(on) make the MIC94030/1 the ideal choice for PCMCIA card sleep mode or distributed power management applications. Additional Features 13.5V minimum drain-to-source breakdown 0.75Ω typical on-resistance at 4.5V gate-to-source voltage 0.45Ω typical on-resistance at 10V gate-to-source voltage Operates with 2.7V gate-to-source voltage Separate substrate connection for added control Industry's smallest surface mount package
Datasheet
Description
The MIC94030 and MIC94031 are 4-terminal silicon gate P-channel MOSFETs that provide low on-resistance in a very small package. Designed for high-side switch applications where space is critical, the MIC94030/1 exhibits an on-resistance of typically 0.75Ω at 4.5V gate-to-source voltage. The MIC94030/1 also operates with only 2.7V gate-to-source voltage. The MIC94030 is the basic 4-lead P-channel MOSFET. The MIC94031 is a variation that includes an internal gate pull-up resistor that can reduce the system parts count in many applications. The 4-terminal SOT-143 package permits a substrate connection separate from the source connection. This 4-terminal configuration improves the θJA (improved heat dissipation) and makes analog switch applications practical. The small size, low threshold, and low RDS(on) make the MIC94030/1 the ideal choice for PCMCIA card sleep mode or distributed power management applications. Additional Features 13.5V minimum drain-to-source breakdown 0.75Ω typical on-resistance at 4.5V gate-to-source voltage 0.45Ω typical on-resistance at 10V gate-to-source voltage Operates with 2.7V gate-to-source voltage Separate substrate connection for added control Industry's smallest surface mount package
Datasheet

Suppliers

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Product
Description
Supplier Links
4-Terminal P-Channel MOSFET High-Side Switch - MIC94030 - Microchip Technology, Inc.
Chandler, AZ, United States
4-Terminal P-Channel MOSFET High-Side Switch
MIC94030
4-Terminal P-Channel MOSFET High-Side Switch MIC94030
The MIC94030 and MIC94031 are 4-terminal silicon gate P-channel MOSFETs that provide low on-resistance in a very small package. Designed for high-side switch applications where space is critical, the MIC94030/1 exhibits an on-resistance of typically 0.75Ω at 4.5V gate-to-source voltage. The MIC94030/1 also operates with only 2.7V gate-to-source voltage. The MIC94030 is the basic 4-lead P-channel MOSFET. The MIC94031 is a variation that includes an internal gate pull-up resistor that can reduce the system parts count in many applications. The 4-terminal SOT-143 package permits a substrate connection separate from the source connection. This 4-terminal configuration improves the θJA (improved heat dissipation) and makes analog switch applications practical. The small size, low threshold, and low RDS(on) make the MIC94030/1 the ideal choice for PCMCIA card sleep mode or distributed power management applications. Additional Features 13.5V minimum drain-to-source breakdown 0.75Ω typical on-resistance at 4.5V gate-to-source voltage 0.45Ω typical on-resistance at 10V gate-to-source voltage Operates with 2.7V gate-to-source voltage Separate substrate connection for added control Industry's smallest surface mount package

The MIC94030 and MIC94031 are 4-terminal silicon gate P-channel MOSFETs that provide low on-resistance in a very small package.

Designed for high-side switch applications where space is critical, the MIC94030/1 exhibits an on-resistance of typically 0.75Ω at 4.5V gate-to-source voltage. The MIC94030/1 also operates with only 2.7V gate-to-source voltage.

The MIC94030 is the basic 4-lead P-channel MOSFET. The MIC94031 is a variation that includes an internal gate pull-up resistor that can reduce the system parts count in many applications.

The 4-terminal SOT-143 package permits a substrate connection separate from the source connection. This 4-terminal configuration improves the θJA (improved heat dissipation) and makes analog switch applications practical.

The small size, low threshold, and low RDS(on) make the MIC94030/1 the ideal choice for PCMCIA card sleep mode or distributed power management applications.

Additional Features

    • 13.5V minimum drain-to-source breakdown
    • 0.75Ω typical on-resistance at 4.5V gate-to-source voltage
    • 0.45Ω typical on-resistance
    • at 10V gate-to-source voltage
    • Operates with 2.7V gate-to-source voltage
    • Separate substrate connection for added control
    • Industry's smallest surface mount package
Supplier's Site Datasheet

Technical Specifications

  Microchip Technology, Inc.
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number MIC94030
Product Name 4-Terminal P-Channel MOSFET High-Side Switch
Polarity P-Channel
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