The MIC94030 is a 4-terminal P-channel MOSFET designed for high-side switching in space-constrained applications. It is housed in an SOT-143 package with a separate substrate connection to improve thermal performance and enable analog switch use. The device has a typical on-resistance of 0.75Ω at a 4.5V gate-to-source voltage and 0.45Ω at 10V, and operates with a minimum gate-to-source voltage of 2.7V. It features a drain-to-source breakdown voltage of 13.5V minimum, a continuous drain current of 1A at 25°C, and a junction temperature range of -55°C to +150°C. Thermal resistance is 220°C/W. The part meets no explicit qualification standards beyond its stated electrical and thermal ratings.
The MIC94030 and MIC94031 are 4-terminal silicon gate P-channel MOSFETs that provide low on-resistance in a very small package.
Designed for high-side switch applications where space is critical, the MIC94030/1 exhibits an on-resistance of typically 0.75Ω at 4.5V gate-to-source voltage. The MIC94030/1 also operates with only 2.7V gate-to-source voltage.
The MIC94030 is the basic 4-lead P-channel MOSFET. The MIC94031 is a variation that includes an internal gate pull-up resistor that can reduce the system parts count in many applications.
The 4-terminal SOT-143 package permits a substrate connection separate from the source connection. This 4-terminal configuration improves the θJA (improved heat dissipation) and makes analog switch applications practical.
The small size, low threshold, and low RDS(on) make the MIC94030/1 the ideal choice for PCMCIA card sleep mode or distributed power management applications.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | MIC94030 |
| Product Name | 4-Terminal P-Channel MOSFET High-Side Switch |
| Polarity | P-Channel |
