Microchip Technology, Inc. Single Bipolar Transistors JANTXV2N6193P

PNP silicon transistor for medium power applications, qualified to MIL-PRF-19500/561 at JANTXV level, housed in a TO-39 package with a maximum collector-emitter voltage of 100 Vdc, collector current of 5.0 Adc, and power dissipation of 10 W at +25°C case temperature. Thermal resistance from junction to case is 17.5 °C/W. Operating and storage temperature range is -65 to +200 °C. Features DC current gain of 40 to 240, collector-emitter saturation voltage up to 1.2 V, and base-emitter saturation voltage up to 1.8 V under specified conditions. Meets MIL-PRF-19500/561 qualification standards.