NPN power silicon transistor for high-current switching applications, housed in a TO-5 package with a thermal resistance from junction to case of 10 °C/W and a maximum power dissipation of 1.0 W at 25°C. The device has a collector-emitter voltage rating of 70 Vdc, a collector current rating of 10 Adc, and a junction temperature range of -65 to +200°C. It is qualified to MIL-PRF-19500/394 and meets JANTXV level requirements. Forward current gain ranges from 50 to 200 at 1.0 A collector current and 5.0 V collector-emitter voltage.
Bipolar (BJT) Transistor NPN 70V 10A 1W Through Hole TO-5
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 1086-20960-ND |
| Product Name | Single Bipolar Transistors |
| Polarity | NPN |
