Microchip Technology, Inc. Single Bipolar Transistors JANTXV2N3879P

NPN silicon power transistor for high-current switching applications, packaged in a TO-66 (TO-213AA) case. Rated for a collector-emitter voltage of 75 Vdc, collector-base voltage of 120 Vdc, and continuous collector current of 7.0 Adc. Total power dissipation is 35 W at 25°C, derating at 200 mW/°C above 25°C. Thermal resistance junction-to-case is 5.0°C/W. Operating and storage junction temperature range is -65°C to +200°C. Qualified to MIL-PRF-19500/526 at JANTXV level. Forward current transfer ratio ranges from 20 to 80 at collector current of 4.0 Adc and collector-emitter voltage of 5.0 Vdc. Collector-emitter saturation voltage is 1.2 Vdc at 4.0 Adc collector current and 0.4 Adc base current. Switching times are 0.44 µs turn-on and 1.2 µs turn-off under specified conditions.