Microchip Technology, Inc. Single Bipolar Transistors JANTXV2N3637P

The JANTXV2N3637P is a PNP silicon switching transistor in a TO-39 package, rated for a collector-emitter voltage of 175 Vdc and a collector current of 1.0 Adc. It operates with a total power dissipation of 1.5 W at +25°C and has a junction temperature range of -65°C to +200°C. The device meets MIL-PRF-19500/357 qualification standards. Its forward current transfer ratio (hFE) ranges from 60 to 300 at 50 mA collector current, and the collector-emitter saturation voltage is up to 0.6 V under specified test conditions. The input capacitance is 75 pF, and the output capacitance is 10 pF.