Microchip Technology, Inc. Bipolar Transistor Arrays JANTXV2N2920U/TR

NPN silicon dual transistor in a surface-mount 6-SMD package, rated for collector-emitter voltage of 60 Vdc and collector current of 30 mAdc, with a total power dissipation of 350 mW when both sections are active. Operating and storage junction temperature ranges from -65 to +200 °C. Qualified to MIL-PRF-19500/355. Forward current transfer ratio ranges from 175 to 600 at I_C = 10 μA and V_CE = 5.0 Vdc, increasing to 300 to 1000 at I_C = 1.0 mA. Collector-emitter saturation voltage is 0.3 Vdc at I_C = 1.0 mA and I_B = 100 μA. Output capacitance is 5.0 pF at V_CB = 5.0 Vdc and I_E = 0.