Microchip Technology, Inc. Single Bipolar Transistors JANTXV2N2907AP

The JANTXV2N2907AP is a PNP silicon small-signal transistor certified to JANTXV quality level, designed for general-purpose switching and amplification. It is packaged in a TO-18 (TO-206AA) metal case with physical dimensions defined by a 0.178 to 0.195 inch diameter and 0.209 to 0.230 inch height. The device has a collector-emitter breakdown voltage of 60 Vdc, a maximum collector current of 600 mAdc, and a total power dissipation of 0.5 W at 25°C ambient. Electrical characteristics include a forward current transfer ratio (hFE) of 100 to 300 at 150 mA collector current and 10 V collector-emitter voltage, a collector-emitter saturation voltage of 0.4 V at 150 mA collector and 15 mA base current, and input/output capacitances of 30 pF and 8 pF respectively. It operates over a junction temperature range of -65 to +200°C and is qualified per MIL-PRF-19500/291.