60-V Dual N-Channel NexFET Power MOSFET, CSD88539ND 8-SOIC -55 to 150
Mosfet Array 2 N-Channel (Dual) 60V 15A 2.1W Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 60V 15A 2.1W Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 60V 15A 2.1W Surface Mount 8-SOIC
High Frequency Synchronous Power Module Product overview: CSD88539ND from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-CSD88539ND can be used for catalog matching and distributor lookup.
Manufacturer: Texas Instruments
Win Source Part Number: 1163559-CSD88539ND
Family Name: CSD88539ND
Manufacturer Homepage: www.ti.com
Alternative Parts (Cross-Reference): HAT2114RJ-E; HAT2114R; HAT2114R-E;
Introduction Date: September 18, 2007
ECCN: EAR99
Estimated EOL Date: 2028
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited
MOSFET 2N-CH 60V 15A 8SOIC
MOSFET, DUAL N CHANNEL, 60V, 15A, SOIC; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.023ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
MOSFET 60-V Dual N-Channel Power MOSFET
MOSFET 2N-CH 60V 15A 8SOIC
| Texas Instruments | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | CSD88539ND | 296-37304-2-ND | 289-CSD88539ND | 1163559-CSD88539ND | CSD88539ND | 29AH3856 | CSD88539ND | CSD88539ND |
| Product Name | CSD88539ND 60-V Dual N-Channel NexFET Power MOSFET, CSD88539ND | FET, MOSFET Arrays | MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD88539ND | FET, MOSFET Arrays | Mosfet, Dual N Channel, 60V, 15A, Soic; Transistor Polarity Texas Instruments | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; 2 N-Channel (Dual) | N-Channel | |||||
| V(BR)DSS | 60 volts | 60 volts | ||||||
| IDSS | 46000 milliamps | 15000 milliamps | 15000 milliamps | |||||
| QG | 7.2 nC | |||||||
| Package Type | SO-8 | "8-SOIC (0.154"", 3.90mm Width)" | SOT3 | 8-SOIC (0.154", 3.90mm Width) | TO-3 |
