Microchip Technology, Inc. Single Bipolar Transistors JANTX2N2221A

NPN silicon switching transistor for military applications, available in TO-18 package with maximum collector current of 800 mA, collector-emitter voltage of 50 V, collector-base voltage of 75 V, and emitter-base voltage of 6 V. Maximum junction temperature is 200°C. Power dissipation is 500 mW at +25°C ambient with thermal resistance junction-to-ambient of 325 °C/W. Minimum current gain (hFE) is 30 at 0.1 mA collector current and 40 at 150 mA collector current. Collector-emitter saturation voltage is 0.3 V at 150 mA collector current and 15 mA base current. Meets MIL-PRF-19500/255AA and JANTX quality level requirements.