Microchip Technology, Inc. Single Bipolar Transistors JAN2N4449UB/TR

JAN2N4449UB/TR is a silicon NPN switching transistor in a TO-46 (TO-206AB) surface-mount package. It has a collector-emitter voltage rating of 20 Vdc, an emitter-base voltage of 6.0 Vdc, and a collector-base voltage of 40 Vdc. The maximum power dissipation is 0.40 W at ambient temperature. Thermal resistance junction-to-case is 135 °C/mW and junction-to-ambient is 437 °C/mW. Operating and storage junction temperature ranges from -65 to +200 °C. It is qualified per MIL-PRF-19500/317 with JANTXV level certification. Forward current gain (hFE) ranges from 20 to 120 at collector currents up to 100 mA. Collector-emitter saturation voltage is 0.45 V at 100 mA collector and 10 mA base current. Switching times are 12 µs turn-on and 18 µs turn-off under specified test conditions. Output and input capacitances are 4.0 pF and 5.0 pF respectively.