Microchip Technology, Inc. RF & MW Power Amplifier ICP1747-1-451I

Description
ICP1747P is a packaged 3 stage MMIC power amplifier fabricated using GaN on SiC technology. ICP1747P operates from 14-18GHz with 47 dBm output power, 25% PAE and 22 dB small signal gain. ICP1747P is well suited to a variety of Test and Measurement and Aerospace and Defense applications.
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Description
ICP1747P is a packaged 3 stage MMIC power amplifier fabricated using GaN on SiC technology. ICP1747P operates from 14-18GHz with 47 dBm output power, 25% PAE and 22 dB small signal gain. ICP1747P is well suited to a variety of Test and Measurement and Aerospace and Defense applications.
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Suppliers

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Product
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RF & MW Power Amplifier - ICP1747-1-451I - Richardson RFPD
Downers Grove, IL, United States
RF & MW Power Amplifier
ICP1747-1-451I
RF & MW Power Amplifier ICP1747-1-451I
ICP1747P is a packaged 3 stage MMIC power amplifier fabricated using GaN on SiC technology. ICP1747P operates from 14-18GHz with 47 dBm output power, 25% PAE and 22 dB small signal gain. ICP1747P is well suited to a variety of Test and Measurement and Aerospace and Defense applications.

ICP1747P is a packaged 3 stage MMIC power amplifier fabricated using GaN on SiC technology. ICP1747P operates from 14-18GHz with 47 dBm output power, 25% PAE and 22 dB small signal gain. ICP1747P is well suited to a variety of Test and Measurement and Aerospace and Defense applications.

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category RF Amplifiers
Product Number ICP1747-1-451I
Product Name RF & MW Power Amplifier
Amplifier Type Power Amplifier
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