Microchip Technology, Inc. Memory ER2055

Description
EEPROM Memory IC 512bit Parallel 2 µs 22-DIP
Datasheet
Description
EEPROM Memory IC 512bit Parallel 2 µs 22-DIP
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - ER2055 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
ER2055
Memory ER2055
EEPROM Memory IC 512bit Parallel 2 µs 22-DIP

EEPROM Memory IC 512bit Parallel 2 µs 22-DIP

Buy Now Datasheet
Futian, China
Integrated Circuits (ICs) - Memory - Memory
ER2055
Integrated Circuits (ICs) - Memory - Memory ER2055
IC EEPROM 512BIT PARALLEL 22DIP

IC EEPROM 512BIT PARALLEL 22DIP

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips
Product Number ER2055 ER2055
Product Name Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category EEPROM; EEPROM EEPROM; Non-Volatile
Access Time 2000 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Density 1 kbits 1 kbits
Unlock Full Specs
to access all available technical data

Similar Products

 - PC16550DV/NOPB - Rochester Electronics
Texas Instruments
Specs
Memory Category FIFO
Package Type PLCC; PLCC44
View Details
Memory - 24C16/P - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 3500 ns
Density 16 kbits
View Details
SDRAM - 1882599 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 5 ns
Bits per Word 8 bits
View Details
Memory - AS58LC1001 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EEPROM; EEPROM
Access Time 250 to 300 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details