The SST39VF200A is a 128K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF200A writes (Program or Erase) with a 2.7-3.6V power supply. This device conforms to JEDEC standard pinouts for x16 memories.
Additional Features
Organized as 128K x16
Low Power Consumption: Active Current: 9 mA (typical) Standby Current: 3 µA (typical)
Sector-Erase Capability:Uniform 2 KWord sectors
Block-Erase Capability:Uniform 32 KWord blocks
Fast Erase and Word-Program: Sector-Erase Time:18 ms (typical), Block-Erase Time:18 ms (typical), Chip-Erase Time:70 ms (typical, Word-Program Time:14 µs (typical)
Packages Available:48-lead TSOP (12mm x 20mm), 48-ball TFBGA (6mm x 8mm), 48-ball WFBGA (4mm x 6mm)
All non-Pb (lead-free) devices are RoHS compliant
The SST39VF200A is a 128K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF200A writes (Program or Erase) with a 2.7-3.6V power supply. This device conforms to JEDEC standard pinouts for x16 memories.
Additional Features
- Organized as 128K x16
- Low Power Consumption: Active Current: 9 mA (typical) Standby Current: 3 µA (typical)
- Sector-Erase Capability:Uniform 2 KWord sectors
- Block-Erase Capability:Uniform 32 KWord blocks
- Fast Erase and Word-Program: Sector-Erase Time:18 ms (typical), Block-Erase Time:18 ms (typical), Chip-Erase Time:70 ms (typical, Word-Program Time:14 µs (typical)
- Packages Available:48-lead TSOP (12mm x 20mm), 48-ball TFBGA (6mm x 8mm), 48-ball WFBGA (4mm x 6mm)
- All non-Pb (lead-free) devices are RoHS compliant
