Microchip Technology, Inc. Memory AT49F001T-90VI

Description
FLASH Memory IC 1Mb (128K x 8) Parallel 90ns 32-VSOP
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Description
FLASH Memory IC 1Mb (128K x 8) Parallel 90ns 32-VSOP
Request a Quote
Datasheet
Datasheet Summary
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The AT49F001T-90VI is a 1-megabit Flash memory device from Quarktwin Technology Ltd., designed for single voltage operation at 5V for both reading and reprogramming. It features a fast read access time of 90 ns and a fast erase cycle time of 10 seconds. The memory is organized into a sector architecture that includes one 16K byte boot block, two 8K byte parameter blocks, and two main memory blocks of 32K and 64K bytes. This device supports byte-by-byte programming with a typical time of 10 ¬µs per byte and offers hardware data protection along with DATA polling for end-of-program detection. It operates with low power dissipation, consuming 50 mA during active operation and only 100 ¬µA in CMOS standby mode. The AT49F001T-90VI is rated for a typical endurance of 10,000 write cycles, making it suitable for applications requiring reliable non-volatile memory. The device is available in a 32-lead VSOP package and is suitable for commercial temperature ranges from 0¬8C to 70¬8C. Its design allows for easy in-system reprogrammability without the need for high input voltages, making it a versatile choice for various electronic applications.

Datasheet Summary
Powered by GS/AI

The AT49F001T-90VI is a 1-megabit Flash memory device from Quarktwin Technology Ltd., designed for single voltage operation at 5V for both reading and reprogramming. It features a fast read access time of 90 ns and a fast erase cycle time of 10 seconds. The memory is organized into a sector architecture that includes one 16K byte boot block, two 8K byte parameter blocks, and two main memory blocks of 32K and 64K bytes. This device supports byte-by-byte programming with a typical time of 10 ¬µs per byte and offers hardware data protection along with DATA polling for end-of-program detection. It operates with low power dissipation, consuming 50 mA during active operation and only 100 ¬µA in CMOS standby mode. The AT49F001T-90VI is rated for a typical endurance of 10,000 write cycles, making it suitable for applications requiring reliable non-volatile memory. The device is available in a 32-lead VSOP package and is suitable for commercial temperature ranges from 0¬8C to 70¬8C. Its design allows for easy in-system reprogrammability without the need for high input voltages, making it a versatile choice for various electronic applications.

Suppliers

Company
Product
Description
Supplier Links
Memory - AT49F001T-90VI-ND - DigiKey
Thief River Falls, MN, United States
FLASH Memory IC 1Mb (128K x 8) Parallel 90ns 32-VSOP

FLASH Memory IC 1Mb (128K x 8) Parallel 90ns 32-VSOP

Buy Now Datasheet
IC FLASH 1MBIT PARALLEL 32VSOP

IC FLASH 1MBIT PARALLEL 32VSOP

Supplier's Site Datasheet
Memory - AT49F001T-90VI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH Memory IC 1Mbit Parallel 90 ns 32-VSOP

FLASH Memory IC 1Mbit Parallel 90 ns 32-VSOP

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - AT49F001T-90VI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AT49F001T-90VI
Integrated Circuits (ICs) - Memory AT49F001T-90VI
IC FLASH 1MBIT PARALLEL 32VSOP

IC FLASH 1MBIT PARALLEL 32VSOP

Supplier's Site

Technical Specifications

  DigiKey Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number AT49F001T-90VI-ND AT49F001T-90VI AT49F001T-90VI AT49F001T-90VI
Product Name Memory Memory Memory Integrated Circuits (ICs) - Memory
Memory Category Flash Flash; Flash Flash; FLASH Flash; Non-Volatile
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 1000 kbits 1000 kbits 1000 kbits 1000 kbits
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