The AT49F001T-90VI is a 1-megabit Flash memory device from Quarktwin Technology Ltd., designed for single voltage operation at 5V for both reading and reprogramming. It features a fast read access time of 90 ns and a fast erase cycle time of 10 seconds. The memory is organized into a sector architecture that includes one 16K byte boot block, two 8K byte parameter blocks, and two main memory blocks of 32K and 64K bytes. This device supports byte-by-byte programming with a typical time of 10 ¬µs per byte and offers hardware data protection along with DATA polling for end-of-program detection. It operates with low power dissipation, consuming 50 mA during active operation and only 100 ¬µA in CMOS standby mode. The AT49F001T-90VI is rated for a typical endurance of 10,000 write cycles, making it suitable for applications requiring reliable non-volatile memory. The device is available in a 32-lead VSOP package and is suitable for commercial temperature ranges from 0¬8C to 70¬8C. Its design allows for easy in-system reprogrammability without the need for high input voltages, making it a versatile choice for various electronic applications.
FLASH Memory IC 1Mb (128K x 8) Parallel 90ns 32-VSOP
IC FLASH 1MBIT PARALLEL 32VSOP
FLASH Memory IC 1Mbit Parallel 90 ns 32-VSOP
IC FLASH 1MBIT PARALLEL 32VSOP
| DigiKey | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | Lingto Electronic Limited | |
|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | AT49F001T-90VI-ND | AT49F001T-90VI | AT49F001T-90VI | AT49F001T-90VI |
| Product Name | Memory | Integrated Circuits (ICs) - Memory | Memory | Memory |
| Memory Category | Flash | Flash; Non-Volatile | Flash; FLASH | Flash; Flash |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | |
| Density | 1000 kbits | 1000 kbits | 1000 kbits | 1000 kbits |