Microchip Technology, Inc. Memory AT49F001T-12TI

Description
FLASH Memory IC 1Mbit Parallel 120 ns 32-TSOP
Description
FLASH Memory IC 1Mbit Parallel 120 ns 32-TSOP
Datasheet
Datasheet Summary
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The AT49F001T-12TI is a 1-megabit (128K x 8) Flash memory device that operates at a single voltage of 5V for both reading and reprogramming. It features a fast read access time of 120 ns and a typical byte programming time of 10 µs. The memory is organized into a sector architecture that includes one 16K byte boot block, two 8K byte parameter blocks, and two main memory blocks of 32K and 64K bytes. This device supports a fast erase cycle time of 10 seconds and offers hardware data protection along with data polling for end-of-program detection. It has a low power dissipation profile, with an active current of 50 mA and a CMOS standby current of 100 µA. The AT49F001T-12TI is rated for a typical endurance of 10,000 write cycles, making it suitable for applications requiring frequent updates. The device is available in multiple package types, including TSOP and PLCC, and is designed for in-system reprogrammability without the need for high input voltages. The boot block includes a programming lockout feature to protect critical data, ensuring that the contents remain unchanged once locked. This product is ideal for applications that require reliable and efficient Flash memory solutions.

Datasheet Summary
Powered by GS/AI

The AT49F001T-12TI is a 1-megabit (128K x 8) Flash memory device that operates at a single voltage of 5V for both reading and reprogramming. It features a fast read access time of 120 ns and a typical byte programming time of 10 µs. The memory is organized into a sector architecture that includes one 16K byte boot block, two 8K byte parameter blocks, and two main memory blocks of 32K and 64K bytes. This device supports a fast erase cycle time of 10 seconds and offers hardware data protection along with data polling for end-of-program detection. It has a low power dissipation profile, with an active current of 50 mA and a CMOS standby current of 100 µA. The AT49F001T-12TI is rated for a typical endurance of 10,000 write cycles, making it suitable for applications requiring frequent updates. The device is available in multiple package types, including TSOP and PLCC, and is designed for in-system reprogrammability without the need for high input voltages. The boot block includes a programming lockout feature to protect critical data, ensuring that the contents remain unchanged once locked. This product is ideal for applications that require reliable and efficient Flash memory solutions.

Suppliers

Company
Product
Description
Supplier Links
Memory - AT49F001T-12TI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH Memory IC 1Mbit Parallel 120 ns 32-TSOP

FLASH Memory IC 1Mbit Parallel 120 ns 32-TSOP

Buy Now Datasheet
IC FLASH 1MBIT PARALLEL 32TSOP

IC FLASH 1MBIT PARALLEL 32TSOP

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number AT49F001T-12TI AT49F001T-12TI
Product Name Memory Memory
Memory Category Flash; FLASH Flash; Flash
Access Time 120 ns 120 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
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