Microchip Technology, Inc. Memory AT49BV162AT-70CI

Description
IC FLASH 16MBIT PARALLEL 48CBGA
Description
IC FLASH 16MBIT PARALLEL 48CBGA
Datasheet
Datasheet Summary
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The AT49BV162AT-70CI is a 16-megabit Flash memory device from Quarktwin Technology Ltd., organized as 1,048,576 words of 16 bits each or 2,097,152 bytes of 8 bits each. It operates with a single voltage read/write range of 2.65V to 3.6V and features a fast read access time of 70 ns. The memory is structured into 39 sectors for erase operations, including thirty-one 32K word sectors and eight 4K word sectors, each with individual write lockout capabilities. This device supports a fast word program time of 12 µs and a sector erase time of 300 ms. It includes a suspend/resume feature for both erase and program operations, allowing for reading and programming from any sector while suspending operations in others. The AT49BV162AT-70CI is designed for low-power operation, consuming 12 mA in active mode and 13 µA in standby mode. It also features data polling, toggle bit, and ready/busy indicators for end-of-program detection, along with a VPP pin for write protection and a RESET input for device initialization. The device is available in a 48-lead TSOP and a 48-ball CBGA package, with options for top or bottom boot block configuration. It is rated for a minimum of 100,000 erase cycles and includes a 128-bit protection register. The AT49BV162AT-70CI is suitable for in-system programming and is offered in a green packaging option that is Pb/Halide-free, making it compliant with environmental standards.

Datasheet Summary
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The AT49BV162AT-70CI is a 16-megabit Flash memory device from Quarktwin Technology Ltd., organized as 1,048,576 words of 16 bits each or 2,097,152 bytes of 8 bits each. It operates with a single voltage read/write range of 2.65V to 3.6V and features a fast read access time of 70 ns. The memory is structured into 39 sectors for erase operations, including thirty-one 32K word sectors and eight 4K word sectors, each with individual write lockout capabilities. This device supports a fast word program time of 12 µs and a sector erase time of 300 ms. It includes a suspend/resume feature for both erase and program operations, allowing for reading and programming from any sector while suspending operations in others. The AT49BV162AT-70CI is designed for low-power operation, consuming 12 mA in active mode and 13 µA in standby mode. It also features data polling, toggle bit, and ready/busy indicators for end-of-program detection, along with a VPP pin for write protection and a RESET input for device initialization. The device is available in a 48-lead TSOP and a 48-ball CBGA package, with options for top or bottom boot block configuration. It is rated for a minimum of 100,000 erase cycles and includes a 128-bit protection register. The AT49BV162AT-70CI is suitable for in-system programming and is offered in a green packaging option that is Pb/Halide-free, making it compliant with environmental standards.

Suppliers

Company
Product
Description
Supplier Links
IC FLASH 16MBIT PARALLEL 48CBGA

IC FLASH 16MBIT PARALLEL 48CBGA

Supplier's Site Datasheet
Memory - AT49BV162AT-70CI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH Memory IC 16Mbit Parallel 70 ns 48-CBGA (6x8)

FLASH Memory IC 16Mbit Parallel 70 ns 48-CBGA (6x8)

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Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number AT49BV162AT-70CI AT49BV162AT-70CI
Product Name Memory Memory
Memory Category Flash; Flash Flash; FLASH
Access Time 70 ns 70 ns
Density 16000 kbits 16000 kbits
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