Microchip Technology, Inc. Memory AT49BV162AT-70CI

Description
FLASH Memory IC 16Mbit Parallel 70 ns 48-CBGA (6x8)
Description
FLASH Memory IC 16Mbit Parallel 70 ns 48-CBGA (6x8)
Datasheet
Datasheet Summary
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The AT49BV162AT-70CI is a 16-megabit Flash memory device from Quarktwin Technology Ltd., organized as 1,048,576 words of 16 bits each or 2,097,152 bytes of 8 bits each. It operates with a single voltage read/write range of 2.65V to 3.6V and features a fast read access time of 70 ns. The memory is structured into 39 sectors for erase operations, including thirty-one 32K word sectors and eight 4K word sectors, each with individual write lockout capabilities. This device supports a fast word program time of 12 µs and a sector erase time of 300 ms. It includes a suspend/resume feature for both erase and program operations, allowing for reading and programming from any sector while suspending operations in others. The AT49BV162AT-70CI is designed for low-power operation, consuming 12 mA in active mode and 13 µA in standby mode. It also features data polling, toggle bit, and ready/busy indicators for end-of-program detection, along with a VPP pin for write protection and a RESET input for device initialization. The device is available in a 48-lead TSOP and a 48-ball CBGA package, with options for top or bottom boot block configuration. It is rated for a minimum of 100,000 erase cycles and includes a 128-bit protection register. The AT49BV162AT-70CI is suitable for in-system programming and is offered in a green packaging option that is Pb/Halide-free, making it compliant with environmental standards.

Datasheet Summary
Powered by GS/AI

The AT49BV162AT-70CI is a 16-megabit Flash memory device from Quarktwin Technology Ltd., organized as 1,048,576 words of 16 bits each or 2,097,152 bytes of 8 bits each. It operates with a single voltage read/write range of 2.65V to 3.6V and features a fast read access time of 70 ns. The memory is structured into 39 sectors for erase operations, including thirty-one 32K word sectors and eight 4K word sectors, each with individual write lockout capabilities. This device supports a fast word program time of 12 µs and a sector erase time of 300 ms. It includes a suspend/resume feature for both erase and program operations, allowing for reading and programming from any sector while suspending operations in others. The AT49BV162AT-70CI is designed for low-power operation, consuming 12 mA in active mode and 13 µA in standby mode. It also features data polling, toggle bit, and ready/busy indicators for end-of-program detection, along with a VPP pin for write protection and a RESET input for device initialization. The device is available in a 48-lead TSOP and a 48-ball CBGA package, with options for top or bottom boot block configuration. It is rated for a minimum of 100,000 erase cycles and includes a 128-bit protection register. The AT49BV162AT-70CI is suitable for in-system programming and is offered in a green packaging option that is Pb/Halide-free, making it compliant with environmental standards.

Suppliers

Company
Product
Description
Supplier Links
Memory - AT49BV162AT-70CI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH Memory IC 16Mbit Parallel 70 ns 48-CBGA (6x8)

FLASH Memory IC 16Mbit Parallel 70 ns 48-CBGA (6x8)

Buy Now Datasheet
IC FLASH 16MBIT PARALLEL 48CBGA

IC FLASH 16MBIT PARALLEL 48CBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number AT49BV162AT-70CI AT49BV162AT-70CI
Product Name Memory Memory
Memory Category Flash; FLASH Flash; Flash
Access Time 70 ns 70 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
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