Microchip Technology, Inc. Memory AT49BV002T-90JC

Description
FLASH Memory IC 2Mb (256K x 8) Parallel 90ns 32-PLCC (13.97x11.43)
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Description
FLASH Memory IC 2Mb (256K x 8) Parallel 90ns 32-PLCC (13.97x11.43)
Request a Quote
Datasheet
Datasheet Summary
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The AT49BV002T-90JC is a 2 megabit (256K x 8) Flash memory device designed for in-system reprogrammability. It operates on a single supply voltage ranging from 2.7V to 3.6V and features a fast read access time of 90 ns. The memory is organized into a sector architecture that includes a 16K byte boot block with programming lockout, two 8K byte parameter blocks, and two main memory blocks of 96K and 128K bytes. This device supports a fast erase cycle time of 10 seconds and allows for byte-by-byte programming at a typical speed of 30 ¬µs per byte. It incorporates hardware data protection and a DATA polling feature for end-of-program detection. The AT49BV002T-90JC is characterized by low power dissipation, with an active current of 25 mA and a CMOS standby current of 50 ¬µA. It is rated for a typical endurance of 10,000 write cycles. The device is available in a 32-lead PLCC package and is suitable for commercial temperature ranges from 0¬8C to 70¬8C. It is ideal for applications requiring reliable non-volatile memory with quick access and reprogramming capabilities.

Datasheet Summary
Powered by GS/AI

The AT49BV002T-90JC is a 2 megabit (256K x 8) Flash memory device designed for in-system reprogrammability. It operates on a single supply voltage ranging from 2.7V to 3.6V and features a fast read access time of 90 ns. The memory is organized into a sector architecture that includes a 16K byte boot block with programming lockout, two 8K byte parameter blocks, and two main memory blocks of 96K and 128K bytes. This device supports a fast erase cycle time of 10 seconds and allows for byte-by-byte programming at a typical speed of 30 ¬µs per byte. It incorporates hardware data protection and a DATA polling feature for end-of-program detection. The AT49BV002T-90JC is characterized by low power dissipation, with an active current of 25 mA and a CMOS standby current of 50 ¬µA. It is rated for a typical endurance of 10,000 write cycles. The device is available in a 32-lead PLCC package and is suitable for commercial temperature ranges from 0¬8C to 70¬8C. It is ideal for applications requiring reliable non-volatile memory with quick access and reprogramming capabilities.

Suppliers

Company
Product
Description
Supplier Links
Memory - AT49BV002T-90JC-ND - DigiKey
Thief River Falls, MN, United States
FLASH Memory IC 2Mb (256K x 8) Parallel 90ns 32-PLCC (13.97x11.43)

FLASH Memory IC 2Mb (256K x 8) Parallel 90ns 32-PLCC (13.97x11.43)

Buy Now Datasheet
Memory - AT49BV002T-90JC - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH Memory IC 2Mbit Parallel 90 ns 32-PLCC (13.97x11.43)

FLASH Memory IC 2Mbit Parallel 90 ns 32-PLCC (13.97x11.43)

Buy Now Datasheet
IC FLASH 2MBIT PARALLEL 32PLCC

IC FLASH 2MBIT PARALLEL 32PLCC

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - AT49BV002T-90JC - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AT49BV002T-90JC
Integrated Circuits (ICs) - Memory AT49BV002T-90JC
IC FLASH 2MBIT PARALLEL 32PLCC

IC FLASH 2MBIT PARALLEL 32PLCC

Supplier's Site

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number AT49BV002T-90JC-ND AT49BV002T-90JC AT49BV002T-90JC AT49BV002T-90JC
Product Name Memory Memory Memory Integrated Circuits (ICs) - Memory
Memory Category Flash Flash; FLASH Flash; Flash Flash; Non-Volatile
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 2000 kbits 2000 kbits 2000 kbits 2000 kbits
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