Microchip Technology, Inc. Memory AT49BV002NT-12TC

Description
FLASH Memory IC 2Mb (256K x 8) Parallel 120ns 32-TSOP
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Description
FLASH Memory IC 2Mb (256K x 8) Parallel 120ns 32-TSOP
Request a Quote
Datasheet
Datasheet Summary
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The AT49BV002NT-12TC is a 2-megabit Flash Memory device from Quarktwin Technology Ltd., designed for in-system reprogrammability with a single supply voltage range of 2.7 to 3.6V. It features a fast read access time of 120 ns and supports a sector architecture that includes one 16K-byte boot block, two 8K-byte parameter blocks, and two main memory blocks of 96K and 128K bytes. The device allows for byte-by-byte programming at a typical speed of 30 µs per byte and has a fast erase cycle time of 10 seconds. Data protection is ensured through hardware mechanisms, and the device supports data polling for end-of-program detection. It operates with low power dissipation, consuming 25 mA during active operation and only 50 µA in CMOS standby mode. The AT49BV002NT-12TC is rated for a typical endurance of 10,000 write cycles, making it suitable for applications requiring reliable memory storage. The device is available in multiple package types, including TSOP and PLCC, and is suitable for both commercial and industrial temperature ranges.

Datasheet Summary
Powered by GS/AI

The AT49BV002NT-12TC is a 2-megabit Flash Memory device from Quarktwin Technology Ltd., designed for in-system reprogrammability with a single supply voltage range of 2.7 to 3.6V. It features a fast read access time of 120 ns and supports a sector architecture that includes one 16K-byte boot block, two 8K-byte parameter blocks, and two main memory blocks of 96K and 128K bytes. The device allows for byte-by-byte programming at a typical speed of 30 µs per byte and has a fast erase cycle time of 10 seconds. Data protection is ensured through hardware mechanisms, and the device supports data polling for end-of-program detection. It operates with low power dissipation, consuming 25 mA during active operation and only 50 µA in CMOS standby mode. The AT49BV002NT-12TC is rated for a typical endurance of 10,000 write cycles, making it suitable for applications requiring reliable memory storage. The device is available in multiple package types, including TSOP and PLCC, and is suitable for both commercial and industrial temperature ranges.

Suppliers

Company
Product
Description
Supplier Links
Memory - AT49BV002NT-12TC-ND - DigiKey
Thief River Falls, MN, United States
FLASH Memory IC 2Mb (256K x 8) Parallel 120ns 32-TSOP

FLASH Memory IC 2Mb (256K x 8) Parallel 120ns 32-TSOP

Buy Now Datasheet
Memory - AT49BV002NT-12TC - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH Memory IC 2Mbit Parallel 120 ns 32-TSOP

FLASH Memory IC 2Mbit Parallel 120 ns 32-TSOP

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - AT49BV002NT-12TC - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AT49BV002NT-12TC
Integrated Circuits (ICs) - Memory AT49BV002NT-12TC
IC FLASH 2MBIT PARALLEL 32TSOP

IC FLASH 2MBIT PARALLEL 32TSOP

Supplier's Site
IC FLASH 2MBIT PARALLEL 32TSOP

IC FLASH 2MBIT PARALLEL 32TSOP

Supplier's Site Datasheet

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number AT49BV002NT-12TC-ND AT49BV002NT-12TC AT49BV002NT-12TC AT49BV002NT-12TC
Product Name Memory Memory Integrated Circuits (ICs) - Memory Memory
Memory Category Flash Flash; FLASH Flash; Non-Volatile Flash; Flash
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 2000 kbits 2000 kbits 2000 kbits 2000 kbits
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