Microchip Technology, Inc. 5V High Speed 64Kbit (8Kbit x 8) Parallel EEPROM with Software Data Protection AT28HC64BF

Description
The Microchip AT28HC64BF is a high-performance 64Kbit Parallel EEPROM offering access times to 55ns with power dissipation of 220mW. Deselected, CMOS standby current is less than 100µA. Accessed like static RAM for the read or write cycle without external components, it contains a 64-byte page register to allow writing of up to 64 bytes simultaneously. Optional Software Data Protection mechanism guards against inadvertent writes; and an extra 64 bytes of EEPROM enables device identification or tracking. Additional Features 8 Kbits x 8 (64 Kbit) 5 V ±10% Supply Parallel Interface 70ns access time Self-Timed Erase and Write Cycles Page Write and Byte Write Data Polling for end of write detection 2 ms Maximum Option Low Power Consumption Read / Write current 40 mA (Max) Standby current TTL 2 mA (Max), CMOS 100 μA (Max) Write-Protection Hardware Protection Software Data Protect More than 100,000 erase/write cycles Data retention > 10 years Temperature Ranges Standard Temperature Range: -40°C to 85°C Available in Green (Pb/Halide-free) Packaging Only 32-lead, Plastic J-leaded Chip Carrier (PLCC) 28-lead, 0.300" Wide, Plastic Gull Wing Small Outline (SOIC)
Datasheet
Description
The Microchip AT28HC64BF is a high-performance 64Kbit Parallel EEPROM offering access times to 55ns with power dissipation of 220mW. Deselected, CMOS standby current is less than 100µA. Accessed like static RAM for the read or write cycle without external components, it contains a 64-byte page register to allow writing of up to 64 bytes simultaneously. Optional Software Data Protection mechanism guards against inadvertent writes; and an extra 64 bytes of EEPROM enables device identification or tracking. Additional Features 8 Kbits x 8 (64 Kbit) 5 V ±10% Supply Parallel Interface 70ns access time Self-Timed Erase and Write Cycles Page Write and Byte Write Data Polling for end of write detection 2 ms Maximum Option Low Power Consumption Read / Write current 40 mA (Max) Standby current TTL 2 mA (Max), CMOS 100 μA (Max) Write-Protection Hardware Protection Software Data Protect More than 100,000 erase/write cycles Data retention > 10 years Temperature Ranges Standard Temperature Range: -40°C to 85°C Available in Green (Pb/Halide-free) Packaging Only 32-lead, Plastic J-leaded Chip Carrier (PLCC) 28-lead, 0.300" Wide, Plastic Gull Wing Small Outline (SOIC)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
5V High Speed 64Kbit (8Kbit x 8) Parallel EEPROM with Software Data Protection - AT28HC64BF - Microchip Technology, Inc.
Chandler, AZ, United States
5V High Speed 64Kbit (8Kbit x 8) Parallel EEPROM with Software Data Protection
AT28HC64BF
5V High Speed 64Kbit (8Kbit x 8) Parallel EEPROM with Software Data Protection AT28HC64BF
The Microchip AT28HC64BF is a high-performance 64Kbit Parallel EEPROM offering access times to 55ns with power dissipation of 220mW. Deselected, CMOS standby current is less than 100µA. Accessed like static RAM for the read or write cycle without external components, it contains a 64-byte page register to allow writing of up to 64 bytes simultaneously. Optional Software Data Protection mechanism guards against inadvertent writes; and an extra 64 bytes of EEPROM enables device identification or tracking. Additional Features 8 Kbits x 8 (64 Kbit) 5 V ±10% Supply Parallel Interface 70ns access time Self-Timed Erase and Write Cycles Page Write and Byte Write Data Polling for end of write detection 2 ms Maximum Option Low Power Consumption Read / Write current 40 mA (Max) Standby current TTL 2 mA (Max), CMOS 100 μA (Max) Write-Protection Hardware Protection Software Data Protect More than 100,000 erase/write cycles Data retention > 10 years Temperature Ranges Standard Temperature Range: -40°C to 85°C Available in Green (Pb/Halide-free) Packaging Only 32-lead, Plastic J-leaded Chip Carrier (PLCC) 28-lead, 0.300" Wide, Plastic Gull Wing Small Outline (SOIC)

The Microchip AT28HC64BF is a high-performance 64Kbit Parallel EEPROM offering access times to 55ns with power dissipation of 220mW. Deselected, CMOS standby current is less than 100µA. Accessed like static RAM for the read or write cycle without external components, it contains a 64-byte page register to allow writing of up to 64 bytes simultaneously. Optional Software Data Protection mechanism guards against inadvertent writes; and an extra 64 bytes of EEPROM enables device identification or tracking.

Additional Features

    • 8 Kbits x 8 (64 Kbit)
    • 5 V ±10% Supply
    • Parallel Interface
      • 70ns access time
    • Self-Timed Erase and Write Cycles
      • Page Write and Byte Write
      • Data Polling for end of write detection
      • 2 ms Maximum Option
    • Low Power Consumption
      • Read / Write current 40 mA (Max)
      • Standby current TTL 2 mA (Max), CMOS 100 μA (Max)
    • Write-Protection
      • Hardware Protection
      • Software Data Protect
    • More than 100,000 erase/write cycles
    • Data retention > 10 years
    • Temperature Ranges
      • Standard Temperature Range: -40°C to 85°C
    • Available in Green (Pb/Halide-free) Packaging Only
      • 32-lead, Plastic J-leaded Chip Carrier (PLCC)
      • 28-lead, 0.300" Wide, Plastic Gull Wing Small Outline (SOIC)
Supplier's Site Datasheet

Technical Specifications

  Microchip Technology, Inc.
Product Category Memory Chips
Product Number AT28HC64BF
Product Name 5V High Speed 64Kbit (8Kbit x 8) Parallel EEPROM with Software Data Protection
Memory Category EEPROM
Access Time 70 to 120 ns
Data Retention 10 years
Operating Temperature -40 to 85 C (-40 to 185 F)
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