Microchip Technology, Inc. Memory AT28HC256F-12SC

Description
EEPROM Memory IC 256Kb (32K x 8) Parallel 120ns 28-SOIC
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Description
EEPROM Memory IC 256Kb (32K x 8) Parallel 120ns 28-SOIC
Request a Quote
Datasheet
Datasheet Summary
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The AT28HC256F-12SC is a high-performance electrically erasable and programmable read-only memory (EEPROM) with a capacity of 256K bits, organized as 32,768 words by 8 bits. It features a fast read access time of 70 ns and supports automatic page write operations with a maximum page write cycle time of 3 ms or 10 ms, allowing for the writing of 1 to 64 bytes simultaneously. The device operates with a single 5V ± 10% supply and has low power dissipation, with an active current of 80 mA and a standby current of 3 mA. The AT28HC256F-12SC is designed for high reliability, utilizing CMOS technology with an endurance of 10^4 to 10^5 cycles and a data retention period of up to 10 years. It includes features such as hardware and software data protection, DATA polling for end-of-write detection, and is compatible with both CMOS and TTL inputs and outputs. The device is available in various package options and is suitable for full military, commercial, and industrial temperature ranges.

Datasheet Summary
Powered by GS/AI

The AT28HC256F-12SC is a high-performance electrically erasable and programmable read-only memory (EEPROM) with a capacity of 256K bits, organized as 32,768 words by 8 bits. It features a fast read access time of 70 ns and supports automatic page write operations with a maximum page write cycle time of 3 ms or 10 ms, allowing for the writing of 1 to 64 bytes simultaneously. The device operates with a single 5V ± 10% supply and has low power dissipation, with an active current of 80 mA and a standby current of 3 mA. The AT28HC256F-12SC is designed for high reliability, utilizing CMOS technology with an endurance of 10^4 to 10^5 cycles and a data retention period of up to 10 years. It includes features such as hardware and software data protection, DATA polling for end-of-write detection, and is compatible with both CMOS and TTL inputs and outputs. The device is available in various package options and is suitable for full military, commercial, and industrial temperature ranges.

Suppliers

Company
Product
Description
Supplier Links
Memory - AT28HC256F-12SC-ND - DigiKey
Thief River Falls, MN, United States
EEPROM Memory IC 256Kb (32K x 8) Parallel 120ns 28-SOIC

EEPROM Memory IC 256Kb (32K x 8) Parallel 120ns 28-SOIC

Buy Now Datasheet
IC EEPROM 256KBIT PAR 28SOIC

IC EEPROM 256KBIT PAR 28SOIC

Supplier's Site Datasheet
Memory - AT28HC256F-12SC - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 256Kbit Parallel 120 ns 28-SOIC

EEPROM Memory IC 256Kbit Parallel 120 ns 28-SOIC

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - AT28HC256F-12SC - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AT28HC256F-12SC
Integrated Circuits (ICs) - Memory AT28HC256F-12SC
IC EEPROM 256KBIT PAR 28SOIC

IC EEPROM 256KBIT PAR 28SOIC

Supplier's Site

Technical Specifications

  DigiKey Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number AT28HC256F-12SC-ND AT28HC256F-12SC AT28HC256F-12SC AT28HC256F-12SC
Product Name Memory Memory Memory Integrated Circuits (ICs) - Memory
Memory Category EEPROM EEPROM; EEPROM EEPROM; EEPROM EEPROM; Non-Volatile
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Package Type SOIC; "28-SOIC (0.295"", 7.50mm Width)" SOIC; 28-SOIC (0.295\", 7.50mm Width) SOIC
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