Microchip Technology, Inc. Integrated Circuits (ICs) - Memory AT28HC256E-90SI

Description
IC EEPROM 256KBIT PAR 28SOIC
Datasheet
Description
IC EEPROM 256KBIT PAR 28SOIC
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - AT28HC256E-90SI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AT28HC256E-90SI
Integrated Circuits (ICs) - Memory AT28HC256E-90SI
IC EEPROM 256KBIT PAR 28SOIC

IC EEPROM 256KBIT PAR 28SOIC

Supplier's Site
Memory - AT28HC256E-90SI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 256Kbit Parallel 90 ns 28-SOIC

EEPROM Memory IC 256Kbit Parallel 90 ns 28-SOIC

Buy Now
IC EEPROM 256KBIT PAR 28SOIC

IC EEPROM 256KBIT PAR 28SOIC

Supplier's Site Datasheet

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number AT28HC256E-90SI AT28HC256E-90SI AT28HC256E-90SI
Product Name Integrated Circuits (ICs) - Memory Memory Memory
Memory Category EEPROM; Non-Volatile EEPROM; EEPROM EEPROM; EEPROM
Access Time 90 ns 90 ns 90 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Unlock Full Specs
to access all available technical data

Similar Products

SMV512K32-SP 16MB Radiation-Hardened SRAM - SMV512K32HFG/EM - Texas Instruments
Specs
Memory Category SRAM Chip
Access Time 20 ns
Density 16000 kbits
View Details
Logic - FIFOs Memory - 67C4013-10NL - Lingto Electronic Limited
Specs
Data Rate 10 MHz
Operating Current 35 mA
View Details
Memory - 2161729 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
Memory - AS8ERLC128K32 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EEPROM; EEPROM
Access Time 250 to 300 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details