The AT28HC256E-12UM/883 is a military-grade 256-Kbit (32,768 x 8) high-speed paged parallel EEPROM. It features a fast read access time of 90 ns and supports automatic page write operations with a page write cycle time of 3 ms or 10 ms maximum, allowing for 1 to 64-byte page write operations. The device operates with a single 5V ± 10% supply and is compatible with both CMOS and TTL inputs and outputs. Power consumption is low, with an active current of 80 mA and a CMOS standby current of 3 mA. The EEPROM includes hardware and software data protection features, as well as data polling for end-of-write detection. It is built using high-reliability CMOS technology, offering an endurance of 10,000 or 100,000 cycles and a data retention period of up to 10 years. The product is available in multiple package types, including 32-Lead CERDIP, 32-Lead Flatpack, 32-Lead CLCC, and 30-Pin PGA, making it suitable for various applications requiring robust memory solutions.
EEPROM Memory IC 256Kb (32K x 8) Parallel 120ns 28-CPGA (13.97x16.51)
IC EEPROM 256KBIT PAR 28CPGA
IC EEPROM 256KBIT PAR 28CPGA
EEPROM Memory IC 256Kbit Parallel 120 ns 28-CPGA (13.97x16.51)
| DigiKey | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | AT28HC256E12UM883-ND | AT28HC256E-12UM/883 | AT28HC256E-12UM/883 | AT28HC256E-12UM/883 |
| Product Name | Memory | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory |
| Memory Category | EEPROM | EEPROM; EEPROM | EEPROM; Non-Volatile | EEPROM; EEPROM |
| Operating Temperature | -55 to 125 C (-67 to 257 F) | -55 to 125 C (-67 to 257 F) | ||
| Package Type | 28-BCPGA | 28-BCPGA | ||
| Supply Voltage | 4.5V ~ 5.5V | Through Hole | 4.5V ~ 5.5V |