Microchip Technology, Inc. Memory AT28HC256E-12UM/883

Description
EEPROM Memory IC 256Kb (32K x 8) Parallel 120ns 28-CPGA (13.97x16.51)
Request a Quote
Description
EEPROM Memory IC 256Kb (32K x 8) Parallel 120ns 28-CPGA (13.97x16.51)
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The AT28HC256E-12UM/883 is a military-grade 256-Kbit (32,768 x 8) high-speed paged parallel EEPROM. It features a fast read access time of 90 ns and supports automatic page write operations with a page write cycle time of 3 ms or 10 ms maximum, allowing for 1 to 64-byte page write operations. The device operates with a single 5V ± 10% supply and is compatible with both CMOS and TTL inputs and outputs. Power consumption is low, with an active current of 80 mA and a CMOS standby current of 3 mA. The EEPROM includes hardware and software data protection features, as well as data polling for end-of-write detection. It is built using high-reliability CMOS technology, offering an endurance of 10,000 or 100,000 cycles and a data retention period of up to 10 years. The product is available in multiple package types, including 32-Lead CERDIP, 32-Lead Flatpack, 32-Lead CLCC, and 30-Pin PGA, making it suitable for various applications requiring robust memory solutions.

Datasheet Summary
Powered by GS/AI

The AT28HC256E-12UM/883 is a military-grade 256-Kbit (32,768 x 8) high-speed paged parallel EEPROM. It features a fast read access time of 90 ns and supports automatic page write operations with a page write cycle time of 3 ms or 10 ms maximum, allowing for 1 to 64-byte page write operations. The device operates with a single 5V ± 10% supply and is compatible with both CMOS and TTL inputs and outputs. Power consumption is low, with an active current of 80 mA and a CMOS standby current of 3 mA. The EEPROM includes hardware and software data protection features, as well as data polling for end-of-write detection. It is built using high-reliability CMOS technology, offering an endurance of 10,000 or 100,000 cycles and a data retention period of up to 10 years. The product is available in multiple package types, including 32-Lead CERDIP, 32-Lead Flatpack, 32-Lead CLCC, and 30-Pin PGA, making it suitable for various applications requiring robust memory solutions.

Suppliers

Company
Product
Description
Supplier Links
Memory - AT28HC256E12UM883-ND - DigiKey
Thief River Falls, MN, United States
EEPROM Memory IC 256Kb (32K x 8) Parallel 120ns 28-CPGA (13.97x16.51)

EEPROM Memory IC 256Kb (32K x 8) Parallel 120ns 28-CPGA (13.97x16.51)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - AT28HC256E-12UM/883 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
AT28HC256E-12UM/883
Integrated Circuits (ICs) - Memory - Memory AT28HC256E-12UM/883
IC EEPROM 256KBIT PAR 28CPGA

IC EEPROM 256KBIT PAR 28CPGA

Supplier's Site
IC EEPROM 256KBIT PAR 28CPGA

IC EEPROM 256KBIT PAR 28CPGA

Supplier's Site Datasheet
Memory - AT28HC256E-12UM/883 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 256Kbit Parallel 120 ns 28-CPGA (13.97x16.51)

EEPROM Memory IC 256Kbit Parallel 120 ns 28-CPGA (13.97x16.51)

Buy Now Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number AT28HC256E12UM883-ND AT28HC256E-12UM/883 AT28HC256E-12UM/883 AT28HC256E-12UM/883
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category EEPROM EEPROM; Non-Volatile EEPROM; EEPROM EEPROM; EEPROM
Operating Temperature -55 to 125 C (-67 to 257 F) -55 to 125 C (-67 to 257 F)
Package Type 28-BCPGA 28-BCPGA
Supply Voltage 4.5V ~ 5.5V Through Hole 4.5V ~ 5.5V
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS58LC1001 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EEPROM; EEPROM
Access Time 250 to 300 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memories - Radiation hardened and high-reliability memories - Space Memories - 5962R1821502VXF - 5962R1821502VXF - Infineon Technologies AG
Specs
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 144000 kbits
Number of Words 4 k
View Details
SDRAM - 2420769 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 20 ns
Number of Words 128000 k
View Details
Memory - AT25128AN-SQ27V4 - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Density 128 kbits
View Details