Microchip Technology, Inc. Memory AT28HC256E-12DM/883

Description
EEPROM Memory IC 256Kb (32K x 8) Parallel 120ns 28-CerDip
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Description
EEPROM Memory IC 256Kb (32K x 8) Parallel 120ns 28-CerDip
Request a Quote
Datasheet
Datasheet Summary
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The AT28HC256E-12DM/883 is a military-grade 256-Kbit (32,768 x 8) high-speed paged parallel EEPROM. It features a fast read access time of 90 ns and supports automatic page write operations with a page write cycle time of 3 ms or a maximum of 10 ms, allowing for 1 to 64-byte page write operations. The device operates with a low power dissipation of 80 mA during active use and 3 mA in CMOS standby mode. Data protection is ensured through hardware and software mechanisms, along with data polling for end-of-write detection. The EEPROM is built using high-reliability CMOS technology, offering an endurance of 10,000 to 100,000 write cycles and a data retention period of up to 10 years. It operates on a single 5V ± 10% supply and is compatible with both CMOS and TTL inputs and outputs. The device is available in multiple package types, including 32-Lead CERDIP, 32-Lead Flatpack, 32-Lead CLCC, and 30-Pin PGA, making it suitable for various applications requiring reliable memory solutions.

Datasheet Summary
Powered by GS/AI

The AT28HC256E-12DM/883 is a military-grade 256-Kbit (32,768 x 8) high-speed paged parallel EEPROM. It features a fast read access time of 90 ns and supports automatic page write operations with a page write cycle time of 3 ms or a maximum of 10 ms, allowing for 1 to 64-byte page write operations. The device operates with a low power dissipation of 80 mA during active use and 3 mA in CMOS standby mode. Data protection is ensured through hardware and software mechanisms, along with data polling for end-of-write detection. The EEPROM is built using high-reliability CMOS technology, offering an endurance of 10,000 to 100,000 write cycles and a data retention period of up to 10 years. It operates on a single 5V ± 10% supply and is compatible with both CMOS and TTL inputs and outputs. The device is available in multiple package types, including 32-Lead CERDIP, 32-Lead Flatpack, 32-Lead CLCC, and 30-Pin PGA, making it suitable for various applications requiring reliable memory solutions.

Suppliers

Company
Product
Description
Supplier Links
Memory - AT28HC256E12DM883-ND - DigiKey
Thief River Falls, MN, United States
EEPROM Memory IC 256Kb (32K x 8) Parallel 120ns 28-CerDip

EEPROM Memory IC 256Kb (32K x 8) Parallel 120ns 28-CerDip

Buy Now Datasheet
Memory - AT28HC256E-12DM/883 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 256Kbit Parallel 120 ns 28-CerDip

EEPROM Memory IC 256Kbit Parallel 120 ns 28-CerDip

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - AT28HC256E-12DM/883 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
AT28HC256E-12DM/883
Integrated Circuits (ICs) - Memory - Memory AT28HC256E-12DM/883
IC EEPROM 256KBIT PAR 28CERDIP

IC EEPROM 256KBIT PAR 28CERDIP

Supplier's Site
IC EEPROM 256KBIT PAR 28CDIP

IC EEPROM 256KBIT PAR 28CDIP

Supplier's Site Datasheet

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number AT28HC256E12DM883-ND AT28HC256E-12DM/883 AT28HC256E-12DM/883 AT28HC256E-12DM/883
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category EEPROM EEPROM; EEPROM EEPROM; Non-Volatile EEPROM; EEPROM
Operating Temperature -55 to 125 C (-67 to 257 F) -55 to 125 C (-67 to 257 F)
Package Type "28-CDIP (0.600"", 15.24mm)" DIP; 28-CDIP (0.600\", 15.24mm)
Supply Voltage 4.5V ~ 5.5V 4.5V ~ 5.5V Through Hole
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