Microchip Technology, Inc. Memory AT28HC256E-12DM/883

Description
EEPROM Memory IC 256Kb (32K x 8) Parallel 120ns 28-CerDip
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Description
EEPROM Memory IC 256Kb (32K x 8) Parallel 120ns 28-CerDip
Request a Quote
Datasheet
Datasheet Summary
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The AT28HC256E-12DM/883 is a military-grade 256-Kbit (32,768 x 8) high-speed paged parallel EEPROM. It features a fast read access time of 90 ns and supports automatic page write operations with a page write cycle time of 3 ms or a maximum of 10 ms, allowing for 1 to 64-byte page write operations. The device operates with a low power dissipation of 80 mA during active use and 3 mA in CMOS standby mode. Data protection is ensured through hardware and software mechanisms, along with data polling for end-of-write detection. The EEPROM is built using high-reliability CMOS technology, offering an endurance of 10,000 to 100,000 write cycles and a data retention period of up to 10 years. It operates on a single 5V ± 10% supply and is compatible with both CMOS and TTL inputs and outputs. The device is available in multiple package types, including 32-Lead CERDIP, 32-Lead Flatpack, 32-Lead CLCC, and 30-Pin PGA, making it suitable for various applications requiring reliable memory solutions.

Datasheet Summary
Powered by GS/AI

The AT28HC256E-12DM/883 is a military-grade 256-Kbit (32,768 x 8) high-speed paged parallel EEPROM. It features a fast read access time of 90 ns and supports automatic page write operations with a page write cycle time of 3 ms or a maximum of 10 ms, allowing for 1 to 64-byte page write operations. The device operates with a low power dissipation of 80 mA during active use and 3 mA in CMOS standby mode. Data protection is ensured through hardware and software mechanisms, along with data polling for end-of-write detection. The EEPROM is built using high-reliability CMOS technology, offering an endurance of 10,000 to 100,000 write cycles and a data retention period of up to 10 years. It operates on a single 5V ± 10% supply and is compatible with both CMOS and TTL inputs and outputs. The device is available in multiple package types, including 32-Lead CERDIP, 32-Lead Flatpack, 32-Lead CLCC, and 30-Pin PGA, making it suitable for various applications requiring reliable memory solutions.

Suppliers

Company
Product
Description
Supplier Links
Memory - AT28HC256E12DM883-ND - DigiKey
Thief River Falls, MN, United States
EEPROM Memory IC 256Kb (32K x 8) Parallel 120ns 28-CerDip

EEPROM Memory IC 256Kb (32K x 8) Parallel 120ns 28-CerDip

Buy Now Datasheet
IC EEPROM 256KBIT PAR 28CDIP

IC EEPROM 256KBIT PAR 28CDIP

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - AT28HC256E-12DM/883 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
AT28HC256E-12DM/883
Integrated Circuits (ICs) - Memory - Memory AT28HC256E-12DM/883
IC EEPROM 256KBIT PAR 28CERDIP

IC EEPROM 256KBIT PAR 28CERDIP

Supplier's Site
Memory - AT28HC256E-12DM/883 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 256Kbit Parallel 120 ns 28-CerDip

EEPROM Memory IC 256Kbit Parallel 120 ns 28-CerDip

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Technical Specifications

  DigiKey Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number AT28HC256E12DM883-ND AT28HC256E-12DM/883 AT28HC256E-12DM/883 AT28HC256E-12DM/883
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category EEPROM EEPROM; EEPROM EEPROM; Non-Volatile EEPROM; EEPROM
Operating Temperature -55 to 125 C (-67 to 257 F) -55 to 125 C (-67 to 257 F)
Package Type "28-CDIP (0.600"", 15.24mm)" DIP; 28-CDIP (0.600\", 15.24mm)
Supply Voltage 4.5V ~ 5.5V Through Hole 4.5V ~ 5.5V
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