Microchip Technology, Inc. Memory AT28C64E-25SC

Description
EEPROM Memory IC 64Kb (8K x 8) Parallel 250ns 28-SOIC
Request a Quote
Description
EEPROM Memory IC 64Kb (8K x 8) Parallel 250ns 28-SOIC
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The AT28C64E-25SC is a low-power, high-performance 64Kbit EEPROM memory device featuring a fast read access time of 120 ns and a byte write time of 200 µs. It operates with a supply voltage of 5V ± 10% and is compatible with both CMOS and TTL logic levels. The device includes self-timed byte write cycles, internal address and data latches, and an automatic clear before write function, which enhances ease of use in microprocessor-controlled applications. This memory chip supports a data retention period of up to 10 years and offers high reliability with an endurance of 10^4 to 10^5 write cycles. It features a READY/BUSY open drain output for write cycle detection and data polling capabilities to signal the completion of write operations. The AT28C64E-25SC is available in multiple package types, including SOIC, PDIP, and PLCC, making it versatile for various design requirements.

Datasheet Summary
Powered by GS/AI

The AT28C64E-25SC is a low-power, high-performance 64Kbit EEPROM memory device featuring a fast read access time of 120 ns and a byte write time of 200 µs. It operates with a supply voltage of 5V ± 10% and is compatible with both CMOS and TTL logic levels. The device includes self-timed byte write cycles, internal address and data latches, and an automatic clear before write function, which enhances ease of use in microprocessor-controlled applications. This memory chip supports a data retention period of up to 10 years and offers high reliability with an endurance of 10^4 to 10^5 write cycles. It features a READY/BUSY open drain output for write cycle detection and data polling capabilities to signal the completion of write operations. The AT28C64E-25SC is available in multiple package types, including SOIC, PDIP, and PLCC, making it versatile for various design requirements.

Suppliers

Company
Product
Description
Supplier Links
Memory - AT28C64E-25SC-ND - DigiKey
Thief River Falls, MN, United States
EEPROM Memory IC 64Kb (8K x 8) Parallel 250ns 28-SOIC

EEPROM Memory IC 64Kb (8K x 8) Parallel 250ns 28-SOIC

Buy Now Datasheet
Memory - AT28C64E-25SC - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 64Kbit Parallel 250 ns 28-SOIC

EEPROM Memory IC 64Kbit Parallel 250 ns 28-SOIC

Buy Now Datasheet
IC EEPROM 64KBIT PARALLEL 28SOIC

IC EEPROM 64KBIT PARALLEL 28SOIC

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - AT28C64E-25SC - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AT28C64E-25SC
Integrated Circuits (ICs) - Memory AT28C64E-25SC
IC EEPROM 64KBIT PARALLEL 28SOIC

IC EEPROM 64KBIT PARALLEL 28SOIC

Supplier's Site

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number AT28C64E-25SC-ND AT28C64E-25SC AT28C64E-25SC AT28C64E-25SC
Product Name Memory Memory Memory Integrated Circuits (ICs) - Memory
Memory Category EEPROM EEPROM; EEPROM EEPROM; EEPROM EEPROM; Non-Volatile
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Package Type SOIC; "28-SOIC (0.295"", 7.50mm Width)" SOIC; 28-SOIC (0.295\", 7.50mm Width) SOIC
Unlock Full Specs
to access all available technical data

Similar Products

SDRAM - 1882632P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 5 ns
Density 2048000 kbits
View Details
Memory - RAM - AS27C256-20JM - 1212176-AS27C256-20JM - Win Source Electronics
Specs
Memory Category SRAM Chip
Access Time 200 ns
Operating Temperature -55 C (-67 F)
View Details
Memory - AT93C46DN-SH-B - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Density 1 kbits
View Details