Microchip Technology, Inc. Memory AT28C256E-25UM/883

Description
EEPROM Memory IC 256Kb (32K x 8) Parallel 250ns 28-CPGA (13.97x16.51)
Request a Quote Datasheet
Description
EEPROM Memory IC 256Kb (32K x 8) Parallel 250ns 28-CPGA (13.97x16.51)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - AT28C256E-25UM883-ND - DigiKey
Thief River Falls, MN, United States
EEPROM Memory IC 256Kb (32K x 8) Parallel 250ns 28-CPGA (13.97x16.51)

EEPROM Memory IC 256Kb (32K x 8) Parallel 250ns 28-CPGA (13.97x16.51)

Buy Now Datasheet
Memory - AT28C256E-25UM/883 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 256Kbit Parallel 250 ns 28-CPGA (13.97x16.51)

EEPROM Memory IC 256Kbit Parallel 250 ns 28-CPGA (13.97x16.51)

Buy Now Datasheet
IC EEPROM 256KBIT PAR 28CPGA

IC EEPROM 256KBIT PAR 28CPGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - AT28C256E-25UM/883 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
AT28C256E-25UM/883
Integrated Circuits (ICs) - Memory - Memory AT28C256E-25UM/883
IC EEPROM 256KBIT PAR 28CPGA

IC EEPROM 256KBIT PAR 28CPGA

Supplier's Site

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number AT28C256E-25UM883-ND AT28C256E-25UM/883 AT28C256E-25UM/883 AT28C256E-25UM/883
Product Name Memory Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category EEPROM EEPROM; EEPROM EEPROM; EEPROM EEPROM; Non-Volatile
Operating Temperature -55 to 125 C (-67 to 257 F) -55 to 125 C (-67 to 257 F)
Package Type 28-BCPGA 28-BCPGA
Supply Voltage 4.5V ~ 5.5V 4.5V ~ 5.5V Through Hole
Unlock Full Specs
to access all available technical data

Similar Products

Memory - MYX4DDR364M16JTBG - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DDR3
Access Time 1.07 ns
Operating Temperature -40 to 105 C (-40 to 221 F)
View Details
Memory - JM38510/23102BFA - Quarktwin Technology Ltd.
View Details
2 suppliers
Memory - CAT24C164LI-G - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 900 ns
Density 16 kbits
View Details
Memory - 8611200818 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers