The Microchip AT28C256 is a high-performance 256Kbit Parallel EEPROM available in both Industrial and Military temp ranges, offering access times to 150ns with power dissipation of 440mW. Deselected, CMOS standby current is less than 200μA. Accessed like static RAM for the read or write cycle without external components, it contains a 64-byte page register to allow writing of up to 64bytes simultaneously. Features an internal Error Correction Circuit for extended endurance and improved data retention, in Military version. Optional Software Data Protection mechanism guards against inadvertent writes; and an extra 64 bytes of EEPROM enables device identification or tracking.
The AT28C256 is also available DUAL MARKED where applicable with the appropriate Standard Military Drawing Number - 5962-88525xxxx. See the datasheet for exact MIL product availability.
Additional Features
32 Kbits x 8 (256 Kbit)
5V ± 10% Supply
Parallel Interface
AT28C256E - High Endurance 100K Write Cycles Option
AT28C256F - 3 ms Fast Write Option
150ns access time
Self-Timed Erase and Write Cycles (10 ms max)
Page Write and Byte Write
Data Polling for end of write detection
Available in Green (Pb/Halide-free) Packaging
Low Power Consumption
Read / Write current 40 mA (Max)
32-lead, Plastic J-leaded Chip Carrier (PLCC)
Standby current TTL 2 mA (Max), CMOS 200 μA (Max)
Write-Protection
Hardware Protection
Software Data Protect
Data retention > 10 years
Temperature Ranges
Standard Temperature Range: -40°C to 85°C
Military Temperature Range: -55°C to 125°C
28-lead, 0.600" Wide, Plastic Dual Inline Package (PDIP)
28-lead, 0.300" Wide, Plastic Gull Wing Small Outline (SOIC)
28-lead, Plastic Thin Small Outline Package (TSOP)
Available in SMD Dual marked (5962-88525xxxx) CERAMIC Hermetic Packaging
28-Lead, 0.600" Wide, Non-Windowed, Ceramic Dual Inline (Cerdip)
28-Lead, Non-Windowed, Ceramic Bottom-Brazed Flat Package (Flatpack)
32-Pad, Non-windowed, Ceramic, Leadless Chip Carrier (LCC)
The Microchip AT28C256 is a high-performance 256Kbit Parallel EEPROM available in both Industrial and Military temp ranges, offering access times to 150ns with power dissipation of 440mW. Deselected, CMOS standby current is less than 200μA. Accessed like static RAM for the read or write cycle without external components, it contains a 64-byte page register to allow writing of up to 64bytes simultaneously. Features an internal Error Correction Circuit for extended endurance and improved data retention, in Military version. Optional Software Data Protection mechanism guards against inadvertent writes; and an extra 64 bytes of EEPROM enables device identification or tracking.
The AT28C256 is also available DUAL MARKED where applicable with the appropriate Standard Military Drawing Number - 5962-88525xxxx. See the datasheet for exact MIL product availability.
Additional Features
- 32 Kbits x 8 (256 Kbit)
- 5V ± 10% Supply
- Parallel Interface
- AT28C256E - High Endurance 100K Write Cycles Option
- AT28C256F - 3 ms Fast Write Option
- 150ns access time
- Self-Timed Erase and Write Cycles (10 ms max)
- Page Write and Byte Write
- Data Polling for end of write detection
- Available in Green (Pb/Halide-free) Packaging
- Low Power Consumption
- Read / Write current 40 mA (Max)
- 32-lead, Plastic J-leaded Chip Carrier (PLCC)
- Standby current TTL 2 mA (Max), CMOS 200 μA (Max)
- Write-Protection
- Hardware Protection
- Software Data Protect
- Data retention > 10 years
- Temperature Ranges
- Standard Temperature Range: -40°C to 85°C
- Military Temperature Range: -55°C to 125°C
- 28-lead, 0.600" Wide, Plastic Dual Inline Package (PDIP)
- 28-lead, 0.300" Wide, Plastic Gull Wing Small Outline (SOIC)
- 28-lead, Plastic Thin Small Outline Package (TSOP)
- Available in SMD Dual marked (5962-88525xxxx) CERAMIC Hermetic Packaging
- 28-Lead, 0.600" Wide, Non-Windowed, Ceramic Dual Inline (Cerdip)
- 28-Lead, Non-Windowed, Ceramic Bottom-Brazed Flat Package (Flatpack)
- 32-Pad, Non-windowed, Ceramic, Leadless Chip Carrier (LCC)
