Microchip Technology, Inc. Memory AT28C040-25FI

Description
EEPROM Memory IC 4Mb (512K x 8) Parallel 250ns 32-FlatPack, Ceramic Bottom-Brazed
Request a Quote Datasheet
Description
EEPROM Memory IC 4Mb (512K x 8) Parallel 250ns 32-FlatPack, Ceramic Bottom-Brazed
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - AT28C040-25FI-ND - DigiKey
Thief River Falls, MN, United States
EEPROM Memory IC 4Mb (512K x 8) Parallel 250ns 32-FlatPack, Ceramic Bottom-Brazed

EEPROM Memory IC 4Mb (512K x 8) Parallel 250ns 32-FlatPack, Ceramic Bottom-Brazed

Buy Now Datasheet
Memory - AT28C040-25FI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 4Mbit Parallel 250 ns 32-FlatPack, Ceramic Bottom-Brazed

EEPROM Memory IC 4Mbit Parallel 250 ns 32-FlatPack, Ceramic Bottom-Brazed

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - AT28C040-25FI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AT28C040-25FI
Integrated Circuits (ICs) - Memory AT28C040-25FI
IC EEPROM 4MBIT PAR 32FLATPACK

IC EEPROM 4MBIT PAR 32FLATPACK

Supplier's Site
IC EEPROM 4MBIT PAR 32FLATPACK

IC EEPROM 4MBIT PAR 32FLATPACK

Supplier's Site Datasheet

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number AT28C040-25FI-ND AT28C040-25FI AT28C040-25FI AT28C040-25FI
Product Name Memory Memory Integrated Circuits (ICs) - Memory Memory
Memory Category EEPROM EEPROM; EEPROM EEPROM; Non-Volatile EEPROM; EEPROM
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 4000 kbits 4000 kbits 4000 kbits 4000 kbits
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