Microchip Technology, Inc. Memory AT28C010E-15TU-T

Description
EEPROM Memory IC 1Mb (128K x 8) Parallel 150ns 32-TSOP
Request a Quote
Description
EEPROM Memory IC 1Mb (128K x 8) Parallel 150ns 32-TSOP
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The AT28C010E-15TU-T is a 1-Megabit (128K x 8) paged parallel EEPROM from Lingto Electronic Limited. It features a fast read access time of 120 ns and supports automatic page write operations with internal address and data latches for up to 128 bytes. The maximum page write cycle time is 10 ms, making it suitable for applications requiring efficient data writing. This EEPROM operates with a single 5V ¬± 10% supply and has low power dissipation, with an active current of 40 mA and a CMOS standby current of 200 ¬µA. It includes hardware and software data protection features, as well as data polling for end-of-write detection. The device is built using high-reliability CMOS technology, offering an endurance of either 10,000 or 100,000 cycles and a data retention period of up to 10 years. The AT28C010E-15TU-T is compatible with both CMOS and TTL inputs and outputs, and it is available in a 32-lead TSOP package. It operates within an industrial temperature range of -40¬8C to +85¬8C and is offered in green (Pb/Halide-free) packaging. This product is suitable for applications that require reliable memory storage with efficient performance.

Datasheet Summary
Powered by GS/AI

The AT28C010E-15TU-T is a 1-Megabit (128K x 8) paged parallel EEPROM from Lingto Electronic Limited. It features a fast read access time of 120 ns and supports automatic page write operations with internal address and data latches for up to 128 bytes. The maximum page write cycle time is 10 ms, making it suitable for applications requiring efficient data writing. This EEPROM operates with a single 5V ¬± 10% supply and has low power dissipation, with an active current of 40 mA and a CMOS standby current of 200 ¬µA. It includes hardware and software data protection features, as well as data polling for end-of-write detection. The device is built using high-reliability CMOS technology, offering an endurance of either 10,000 or 100,000 cycles and a data retention period of up to 10 years. The AT28C010E-15TU-T is compatible with both CMOS and TTL inputs and outputs, and it is available in a 32-lead TSOP package. It operates within an industrial temperature range of -40¬8C to +85¬8C and is offered in green (Pb/Halide-free) packaging. This product is suitable for applications that require reliable memory storage with efficient performance.

Suppliers

Company
Product
Description
Supplier Links
Memory - AT28C010E-15TU-TDKR-ND - DigiKey
Thief River Falls, MN, United States
EEPROM Memory IC 1Mb (128K x 8) Parallel 150ns 32-TSOP

EEPROM Memory IC 1Mb (128K x 8) Parallel 150ns 32-TSOP

Buy Now Datasheet
Memory - AT28C010E-15TU-TCT-ND - DigiKey
Thief River Falls, MN, United States
EEPROM Memory IC 1Mb (128K x 8) Parallel 150ns 32-TSOP

EEPROM Memory IC 1Mb (128K x 8) Parallel 150ns 32-TSOP

Buy Now Datasheet
Memory - AT28C010E-15TU-TTR-ND - DigiKey
Thief River Falls, MN, United States
EEPROM Memory IC 1Mb (128K x 8) Parallel 150ns 32-TSOP

EEPROM Memory IC 1Mb (128K x 8) Parallel 150ns 32-TSOP

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - AT28C010E-15TU-T - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
AT28C010E-15TU-T
Integrated Circuits (ICs) - Memory - Memory AT28C010E-15TU-T
IC EEPROM 1MBIT PARALLEL 32TSOP

IC EEPROM 1MBIT PARALLEL 32TSOP

Supplier's Site
IC EEPROM 1MBIT PARALLEL 32TSOP

IC EEPROM 1MBIT PARALLEL 32TSOP

Supplier's Site Datasheet
Memory - AT28C010E-15TU-T - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 1Mbit Parallel 150 ns 32-TSOP

EEPROM Memory IC 1Mbit Parallel 150 ns 32-TSOP

Buy Now Datasheet
IC EEPROM 1MBIT PARALLEL 32TSOP

IC EEPROM 1MBIT PARALLEL 32TSOP

Supplier's Site Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd. ODG (Origin Data Global)
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number AT28C010E-15TU-TDKR-ND AT28C010E-15TU-T AT28C010E-15TU-T AT28C010E-15TU-T AT28C010E-15TU-T
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory Memory Memory
Memory Category EEPROM EEPROM; Non-Volatile EEPROM; EEPROM EEPROM; EEPROM EEPROM; EEPROM
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 1000 kbits 1000 kbits 1000 kbits 1000 kbits 1000 kbits
Package Type "32-TFSOP (0.724"", 18.40mm Width)" 32-TFSOP (0.724\", 18.40mm Width) 32-TFSOP (0.724", 18.40mm Width)
Unlock Full Specs
to access all available technical data

Similar Products

BGA Memory IC and Storage Component - 736-PCI7402ZHK - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category Flash
Operating Temperature 0 C (32 F)
Package Type BGA; BGA
View Details
2 suppliers
Memory - AS5C1001 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SRAM; SRAM Chip
Access Time 20 to 70 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Flash Memory - 1882794 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Bits per Word 8 bits
View Details