Microchip Technology, Inc. Memory AT28C010E-12LM/883

Description
EEPROM Memory IC 1Mbit Parallel 120 ns 44-CLCC (16.55x16.55)
Description
EEPROM Memory IC 1Mbit Parallel 120 ns 44-CLCC (16.55x16.55)
Datasheet
Datasheet Summary
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The AT28C010E-12LM/883 is a military-grade 1-Mbit (131,072 x 8) paged parallel EEPROM designed for high reliability and performance. It features a fast read access time of 120 ns and supports automatic page write operations with a maximum page write cycle time of 10 ms, allowing for writing of 1 to 128 bytes in a single operation. The device operates with a single 5V ± 10% supply and is compatible with both CMOS and TTL logic levels. Power consumption is low, with an active current of 80 mA and a standby current of 300 µA. The EEPROM includes hardware and software data protection mechanisms, as well as data polling for end-of-write detection. It offers an endurance of 10,000 to 100,000 write cycles and a data retention period of up to 10 years. The device is available in multiple package types, including 32-lead CERDIP, flatpack, CLCC, and 30-pin PGA, making it versatile for various applications.

Datasheet Summary
Powered by GS/AI

The AT28C010E-12LM/883 is a military-grade 1-Mbit (131,072 x 8) paged parallel EEPROM designed for high reliability and performance. It features a fast read access time of 120 ns and supports automatic page write operations with a maximum page write cycle time of 10 ms, allowing for writing of 1 to 128 bytes in a single operation. The device operates with a single 5V ± 10% supply and is compatible with both CMOS and TTL logic levels. Power consumption is low, with an active current of 80 mA and a standby current of 300 µA. The EEPROM includes hardware and software data protection mechanisms, as well as data polling for end-of-write detection. It offers an endurance of 10,000 to 100,000 write cycles and a data retention period of up to 10 years. The device is available in multiple package types, including 32-lead CERDIP, flatpack, CLCC, and 30-pin PGA, making it versatile for various applications.

Suppliers

Company
Product
Description
Supplier Links
Memory - AT28C010E-12LM/883 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 1Mbit Parallel 120 ns 44-CLCC (16.55x16.55)

EEPROM Memory IC 1Mbit Parallel 120 ns 44-CLCC (16.55x16.55)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - AT28C010E-12LM/883 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
AT28C010E-12LM/883
Integrated Circuits (ICs) - Memory - Memory AT28C010E-12LM/883
IC EEPROM 1MBIT PARALLEL 44CLCC

IC EEPROM 1MBIT PARALLEL 44CLCC

Supplier's Site
IC EEPROM 1MBIT PARALLEL 44CLCC

IC EEPROM 1MBIT PARALLEL 44CLCC

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number AT28C010E-12LM/883 AT28C010E-12LM/883 AT28C010E-12LM/883
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category EEPROM; EEPROM EEPROM; Non-Volatile EEPROM; EEPROM
Access Time 120 ns 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 1000 kbits 1000 kbits 1000 kbits
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