The AT28C010E-12LM/883 is a military-grade 1-Mbit (131,072 x 8) paged parallel EEPROM designed for high reliability and performance. It features a fast read access time of 120 ns and supports automatic page write operations with a maximum page write cycle time of 10 ms, allowing for writing of 1 to 128 bytes in a single operation. The device operates with a single 5V ± 10% supply and is compatible with both CMOS and TTL logic levels. Power consumption is low, with an active current of 80 mA and a standby current of 300 µA. The EEPROM includes hardware and software data protection mechanisms, as well as data polling for end-of-write detection. It offers an endurance of 10,000 to 100,000 write cycles and a data retention period of up to 10 years. The device is available in multiple package types, including 32-lead CERDIP, flatpack, CLCC, and 30-pin PGA, making it versatile for various applications.
IC EEPROM 1MBIT PARALLEL 44CLCC
EEPROM Memory IC 1Mbit Parallel 120 ns 44-CLCC (16.55x16.55)
IC EEPROM 1MBIT PARALLEL 44CLCC
| Lingto Electronic Limited | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips |
| Product Number | AT28C010E-12LM/883 | AT28C010E-12LM/883 | AT28C010E-12LM/883 |
| Product Name | Memory | Memory | Integrated Circuits (ICs) - Memory - Memory |
| Memory Category | EEPROM; EEPROM | EEPROM; EEPROM | EEPROM; Non-Volatile |
| Access Time | 120 ns | 120 ns | |
| Density | 1000 kbits | 1000 kbits | 1000 kbits |
| Operating Temperature | -55 to 125 C (-67 to 257 F) |