Microchip Technology, Inc. Memory AT28C010-12FM/883-341

Description
EEPROM Memory IC 1Mbit Parallel 120 ns 32-FlatPack, Ceramic Bottom-Brazed
Datasheet
Description
EEPROM Memory IC 1Mbit Parallel 120 ns 32-FlatPack, Ceramic Bottom-Brazed
Datasheet

Suppliers

Company
Product
Description
Supplier Links
EEPROM Memory IC 1Mbit Parallel 120 ns 32-FlatPack, Ceramic Bottom-Brazed

EEPROM Memory IC 1Mbit Parallel 120 ns 32-FlatPack, Ceramic Bottom-Brazed

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - AT28C010-12FM/883-341 - Acme Chip Technology Co., Limited
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
AT28C010-12FM/883-341
Integrated Circuits (ICs) - Memory - Memory AT28C010-12FM/883-341
IC EEPROM 1MBIT PAR 32FLATPACK

IC EEPROM 1MBIT PAR 32FLATPACK

Supplier's Site
IC EEPROM 1MBIT PAR 32FLATPACK

IC EEPROM 1MBIT PAR 32FLATPACK

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Acme Chip Technology Co., Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number AT28C010-12FM/883-341 AT28C010-12FM/883-341 AT28C010-12FM/883-341
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category EEPROM; EEPROM EEPROM; Non-Volatile EEPROM; EEPROM
Access Time 120 ns 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 1000 kbits 1000 kbits 1000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS5C2568 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Flash Memory - 1882679P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Density 128000 kbits
Package Type WSON
View Details
Memory - 16-3791-01-T - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers