Microchip Technology, Inc. Memory AT28C010-12FM/883-341

Description
EEPROM Memory IC 1Mbit Parallel 120 ns 32-FlatPack, Ceramic Bottom-Brazed
Datasheet
Description
EEPROM Memory IC 1Mbit Parallel 120 ns 32-FlatPack, Ceramic Bottom-Brazed
Datasheet

Suppliers

Company
Product
Description
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EEPROM Memory IC 1Mbit Parallel 120 ns 32-FlatPack, Ceramic Bottom-Brazed

EEPROM Memory IC 1Mbit Parallel 120 ns 32-FlatPack, Ceramic Bottom-Brazed

Buy Now Datasheet
IC EEPROM 1MBIT PAR 32FLATPACK

IC EEPROM 1MBIT PAR 32FLATPACK

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - AT28C010-12FM/883-341 - Acme Chip Technology Co., Limited
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
AT28C010-12FM/883-341
Integrated Circuits (ICs) - Memory - Memory AT28C010-12FM/883-341
IC EEPROM 1MBIT PAR 32FLATPACK

IC EEPROM 1MBIT PAR 32FLATPACK

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number AT28C010-12FM/883-341 AT28C010-12FM/883-341 AT28C010-12FM/883-341
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category EEPROM; EEPROM EEPROM; EEPROM EEPROM; Non-Volatile
Access Time 120 ns 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 1000 kbits 1000 kbits 1000 kbits
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