Microchip Technology, Inc. Memory AT28BV64-25SI

Description
EEPROM Memory IC 64Kbit Parallel 250 ns 28-SOIC
Datasheet
Description
EEPROM Memory IC 64Kbit Parallel 250 ns 28-SOIC
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - AT28BV64-25SI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 64Kbit Parallel 250 ns 28-SOIC

EEPROM Memory IC 64Kbit Parallel 250 ns 28-SOIC

Buy Now
IC EEPROM 64KBIT PARALLEL 28SOIC

IC EEPROM 64KBIT PARALLEL 28SOIC

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - AT28BV64-25SI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AT28BV64-25SI
Integrated Circuits (ICs) - Memory AT28BV64-25SI
IC EEPROM 64KBIT PARALLEL 28SOIC

IC EEPROM 64KBIT PARALLEL 28SOIC

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number AT28BV64-25SI AT28BV64-25SI AT28BV64-25SI
Product Name Memory Memory Integrated Circuits (ICs) - Memory
Memory Category EEPROM; EEPROM EEPROM; EEPROM EEPROM; Non-Volatile
Access Time 250 ns 250 ns 250 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Unlock Full Specs
to access all available technical data

Similar Products

SMV512K32-SP 16MB Radiation-Hardened SRAM - SMV512K32HFG - Texas Instruments
Specs
Memory Category SRAM Chip
Access Time 20 ns
Density 16000 kbits
View Details
7 suppliers
SDRAM - 2420776 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 0.4000 ns
Number of Words 64000 k
View Details
Memory - AS28C010 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EEPROM; EEPROM
Access Time 120 to 250 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 2504783 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details