Microchip Technology, Inc. Battery-Voltage 256Kb (32Kbit x 8) Parallel EEPROM with Software Data Protection AT28BV256

Description
The Microchip AT28BV256 is a high-performance 256Kbit Parallel EEPROM offering access times to 200ns with 54mW power dissipation and 2.7V supply voltage. Deselected, CMOS standby current is less than 20µA. Access like static RAM for the read or write cycle without external components; it contains a 64-byte page register to allow writing of up to 64 bytes simultaneously. Optional Software Data Protection mechanism guards against inadvertent writes; and an extra 64 bytes of EEPROM enables device identification or tracking. Additional Features 32 Kbits x 8 (256 Kbit) 2.7V to 3.6V Supply Parallel Interface 200ns access time Self-Timed Erase and Write Cycles (10 ms max) Page Write and Byte Write Data Polling for end of write detection Low Power Consumption Read / Write current 15 mA (Max) Standby current 20 μA (Typ), 50 μA (Max) Write-Protection Hardware Protection Software Data Protect More than 100,000 erase/write cycles Data retention > 10 years Temperature Ranges Standard Temperature Range: -40°C to 85°C Available in Green (Pb/Halide-free) Packaging Only 32-lead, Plastic J-leaded Chip Carrier (PLCC) 28-lead, 0.300" Wide, Plastic Gull Wing Small Outline (SOIC) 28-lead, Plastic Thin Small Outline Package (TSOP)
Datasheet
Description
The Microchip AT28BV256 is a high-performance 256Kbit Parallel EEPROM offering access times to 200ns with 54mW power dissipation and 2.7V supply voltage. Deselected, CMOS standby current is less than 20µA. Access like static RAM for the read or write cycle without external components; it contains a 64-byte page register to allow writing of up to 64 bytes simultaneously. Optional Software Data Protection mechanism guards against inadvertent writes; and an extra 64 bytes of EEPROM enables device identification or tracking. Additional Features 32 Kbits x 8 (256 Kbit) 2.7V to 3.6V Supply Parallel Interface 200ns access time Self-Timed Erase and Write Cycles (10 ms max) Page Write and Byte Write Data Polling for end of write detection Low Power Consumption Read / Write current 15 mA (Max) Standby current 20 μA (Typ), 50 μA (Max) Write-Protection Hardware Protection Software Data Protect More than 100,000 erase/write cycles Data retention > 10 years Temperature Ranges Standard Temperature Range: -40°C to 85°C Available in Green (Pb/Halide-free) Packaging Only 32-lead, Plastic J-leaded Chip Carrier (PLCC) 28-lead, 0.300" Wide, Plastic Gull Wing Small Outline (SOIC) 28-lead, Plastic Thin Small Outline Package (TSOP)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Battery-Voltage 256Kb (32Kbit x 8) Parallel EEPROM with Software Data Protection - AT28BV256 - Microchip Technology, Inc.
Chandler, AZ, United States
Battery-Voltage 256Kb (32Kbit x 8) Parallel EEPROM with Software Data Protection
AT28BV256
Battery-Voltage 256Kb (32Kbit x 8) Parallel EEPROM with Software Data Protection AT28BV256
The Microchip AT28BV256 is a high-performance 256Kbit Parallel EEPROM offering access times to 200ns with 54mW power dissipation and 2.7V supply voltage. Deselected, CMOS standby current is less than 20µA. Access like static RAM for the read or write cycle without external components; it contains a 64-byte page register to allow writing of up to 64 bytes simultaneously. Optional Software Data Protection mechanism guards against inadvertent writes; and an extra 64 bytes of EEPROM enables device identification or tracking. Additional Features 32 Kbits x 8 (256 Kbit) 2.7V to 3.6V Supply Parallel Interface 200ns access time Self-Timed Erase and Write Cycles (10 ms max) Page Write and Byte Write Data Polling for end of write detection Low Power Consumption Read / Write current 15 mA (Max) Standby current 20 μA (Typ), 50 μA (Max) Write-Protection Hardware Protection Software Data Protect More than 100,000 erase/write cycles Data retention > 10 years Temperature Ranges Standard Temperature Range: -40°C to 85°C Available in Green (Pb/Halide-free) Packaging Only 32-lead, Plastic J-leaded Chip Carrier (PLCC) 28-lead, 0.300" Wide, Plastic Gull Wing Small Outline (SOIC) 28-lead, Plastic Thin Small Outline Package (TSOP)

The Microchip AT28BV256 is a high-performance 256Kbit Parallel EEPROM offering access times to 200ns with 54mW power dissipation and 2.7V supply voltage. Deselected, CMOS standby current is less than 20µA. Access like static RAM for the read or write cycle without external components; it contains a 64-byte page register to allow writing of up to 64 bytes simultaneously. Optional Software Data Protection mechanism guards against inadvertent writes; and an extra 64 bytes of EEPROM enables device identification or tracking.

Additional Features

    • 32 Kbits x 8 (256 Kbit)
    • 2.7V to 3.6V Supply
    • Parallel Interface
      • 200ns access time
    • Self-Timed Erase and Write Cycles (10 ms max)
      • Page Write and Byte Write
      • Data Polling for end of write detection
    • Low Power Consumption
      • Read / Write current 15 mA (Max)
      • Standby current 20 μA (Typ), 50 μA (Max)
    • Write-Protection
      • Hardware Protection
      • Software Data Protect
    • More than 100,000 erase/write cycles
    • Data retention > 10 years
    • Temperature Ranges
      • Standard Temperature Range: -40°C to 85°C
    • Available in Green (Pb/Halide-free) Packaging Only
      • 32-lead, Plastic J-leaded Chip Carrier (PLCC)
      • 28-lead, 0.300" Wide, Plastic Gull Wing Small Outline (SOIC)
      • 28-lead, Plastic Thin Small Outline Package (TSOP)
Supplier's Site Datasheet

Technical Specifications

  Microchip Technology, Inc.
Product Category Memory Chips
Product Number AT28BV256
Product Name Battery-Voltage 256Kb (32Kbit x 8) Parallel EEPROM with Software Data Protection
Memory Category EEPROM
Access Time 200 ns
Data Retention 10 years
Operating Temperature -40 to 85 C (-40 to 185 F)
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