Microchip Technology, Inc. Memory AT28BV16-25SI

Description
EEPROM Memory IC 16Kbit Parallel 250 ns 24-SOIC
  • Memory - AT28BV16-25SI - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Memory - AT28BV16-25SI - Lingto Electronic Limited
    Lingto Electronic Limited
Datasheet
Description
EEPROM Memory IC 16Kbit Parallel 250 ns 24-SOIC
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - AT28BV16-25SI - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
AT28BV16-25SI
Memory AT28BV16-25SI
EEPROM Memory IC 16Kbit Parallel 250 ns 24-SOIC

EEPROM Memory IC 16Kbit Parallel 250 ns 24-SOIC

Buy Now Datasheet
Memory - AT28BV16-25SI - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
AT28BV16-25SI
Memory AT28BV16-25SI
IC EEPROM 16KBIT PARALLEL 24SOIC

IC EEPROM 16KBIT PARALLEL 24SOIC

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number AT28BV16-25SI AT28BV16-25SI
Product Name Memory Memory
Memory Category EEPROM; EEPROM EEPROM; EEPROM
Access Time 250 ns 250 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Unlock Full Specs
to access all available technical data

Similar Products

Memory IC and Storage Component - 736-DP8521AV-25 - ERSAELECTRONICS PTE. LTD.
Texas Instruments
Memory IC and Storage Component
DP8521AV-25
Specs
Memory Category DRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type Bulk
View Details
2 suppliers
Flash Memory - 1712234P - RS Components, Ltd.
RS Components, Ltd.
Flash Memory
1712234P
Specs
Memory Category Flash
Density 64000 kbits
Package Type SOIC; SOIC
View Details
Memory - 0607-000023 - Lingto Electronic Limited
Infineon Technologies AG
Memory
0607-000023
View Details
Memory - CAT24C02WI-G - Lingto Electronic Limited
Rochester Electronics
Memory
CAT24C02WI-G
Specs
Memory Category EEPROM; EEPROM
Access Time 900 ns
Density 2 kbits
View Details