Microchip Technology, Inc. Memory AT27BV512-12RI

Description
EPROM - OTP Memory IC 512Kbit Parallel 120 ns 28-SOIC
  • Memory - AT27BV512-12RI - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Memory - AT27BV512-12RI - Lingto Electronic Limited
    Lingto Electronic Limited
Datasheet
Description
EPROM - OTP Memory IC 512Kbit Parallel 120 ns 28-SOIC
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - AT27BV512-12RI - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
AT27BV512-12RI
Memory AT27BV512-12RI
EPROM - OTP Memory IC 512Kbit Parallel 120 ns 28-SOIC

EPROM - OTP Memory IC 512Kbit Parallel 120 ns 28-SOIC

Buy Now Datasheet
Memory - AT27BV512-12RI - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
AT27BV512-12RI
Memory AT27BV512-12RI
IC EPROM 512KBIT PARALLEL 28SOIC

IC EPROM 512KBIT PARALLEL 28SOIC

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number AT27BV512-12RI AT27BV512-12RI
Product Name Memory Memory
Memory Category EPROM; EPROM EPROM; EPROM
Access Time 120 ns 120 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS27C010A - Micross Components, Inc.
Micross Components, Inc.
Memory
AS27C010A
Specs
Memory Category EPROM; UVEPROM
Access Time 41263 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - CY7C263-55QMB - Lingto Electronic Limited
Rochester Electronics
Memory
CY7C263-55QMB
Specs
Memory Category EPROM; EPROM
Access Time 55 ns
Density 64 kbits
View Details
SDRAM - 2420768 - RS Components, Ltd.
RS Components, Ltd.
SDRAM
2420768
Specs
Memory Category DRAM Chip
Access Time 20 ns
Operating Temperature -40 C (-40 F)
View Details
Memory - 8 611 200 794 - Lingto Electronic Limited
Infineon Technologies AG
Memory
8 611 200 794
View Details
2 suppliers