Microchip Technology, Inc. Memory AT27BV256-12TI

Description
EPROM - OTP Memory IC 256Kbit Parallel 120 ns 28-TSOP
  • Memory - AT27BV256-12TI - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Memory - AT27BV256-12TI - Lingto Electronic Limited
    Lingto Electronic Limited
Datasheet
Description
EPROM - OTP Memory IC 256Kbit Parallel 120 ns 28-TSOP
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - AT27BV256-12TI - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
AT27BV256-12TI
Memory AT27BV256-12TI
EPROM - OTP Memory IC 256Kbit Parallel 120 ns 28-TSOP

EPROM - OTP Memory IC 256Kbit Parallel 120 ns 28-TSOP

Buy Now Datasheet
Memory - AT27BV256-12TI - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
AT27BV256-12TI
Memory AT27BV256-12TI
IC EPROM 256KBIT PARALLEL 28TSOP

IC EPROM 256KBIT PARALLEL 28TSOP

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number AT27BV256-12TI AT27BV256-12TI
Product Name Memory Memory
Memory Category EPROM; EPROM EPROM; EPROM
Access Time 120 ns 120 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Unlock Full Specs
to access all available technical data

Similar Products

Memory - SMJ4C1024 - Micross Components, Inc.
Micross Components, Inc.
Memory
SMJ4C1024
Specs
Memory Category DRAM; DRAM Chip
Access Time 80 to 150 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 16-3160-01 - Lingto Electronic Limited
Infineon Technologies AG
Memory
16-3160-01
View Details
2 suppliers
Flash Memory - 1882811 - RS Components, Ltd.
RS Components, Ltd.
Flash Memory
1882811
Specs
Memory Category Flash
Bits per Word 8 bits
Pins 8
View Details
Memory - CY7C243-25PC - Lingto Electronic Limited
Rochester Electronics
Memory
CY7C243-25PC
Specs
Memory Category EPROM; EPROM
Access Time 25 ns
Density 32 kbits
View Details