Microchip Technology, Inc. Memory AT27BV010-90TU

Description
IC EPROM 1MBIT PARALLEL 32TSOP
  • Memory - AT27BV010-90TU - Lingto Electronic Limited
    Lingto Electronic Limited
  • Memory - AT27BV010-90TU - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Datasheet
Description
IC EPROM 1MBIT PARALLEL 32TSOP
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - AT27BV010-90TU - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
AT27BV010-90TU
Memory AT27BV010-90TU
IC EPROM 1MBIT PARALLEL 32TSOP

IC EPROM 1MBIT PARALLEL 32TSOP

Supplier's Site Datasheet
Memory - AT27BV010-90TU - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
AT27BV010-90TU
Memory AT27BV010-90TU
EPROM - OTP Memory IC 1Mbit Parallel 90 ns 32-TSOP

EPROM - OTP Memory IC 1Mbit Parallel 90 ns 32-TSOP

Buy Now Datasheet

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number AT27BV010-90TU AT27BV010-90TU
Product Name Memory Memory
Memory Category EPROM; EPROM EPROM; EPROM
Access Time 90 ns 90 ns
Density 1000 kbits 1000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 27C256-20B/XA - Lingto Electronic Limited
Rochester Electronics
Memory
27C256-20B/XA
Specs
Memory Category EPROM; EPROM
Access Time 200 ns
Density 256 kbits
View Details
Memory - SMJ416160 - Micross Components, Inc.
Micross Components, Inc.
Memory
SMJ416160
Specs
Memory Category DRAM; DRAM Chip
Access Time 70 to 80 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 40060299 - Lingto Electronic Limited
Infineon Technologies AG
Memory
40060299
View Details
2 suppliers
Controllers - BQ2204ASN-NTRG4 - Quarktwin Technology Ltd.
Texas Instruments
Controllers
BQ2204ASN-NTRG4
Specs
Operating Temperature -40 to 85 C (-40 to 185 F)
Package Type SOIC; 16-SOIC (0.154\", 3.90mm Width)
Supply Voltage 4.5V ~ 5.5V
View Details
2 suppliers