Microchip Technology, Inc. Memory AT27BV010-12VI

Description
EPROM - OTP Memory IC 1Mbit Parallel 120 ns 32-VSOP
  • Memory - AT27BV010-12VI - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Memory - AT27BV010-12VI - Lingto Electronic Limited
    Lingto Electronic Limited
Datasheet
Description
EPROM - OTP Memory IC 1Mbit Parallel 120 ns 32-VSOP
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - AT27BV010-12VI - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
AT27BV010-12VI
Memory AT27BV010-12VI
EPROM - OTP Memory IC 1Mbit Parallel 120 ns 32-VSOP

EPROM - OTP Memory IC 1Mbit Parallel 120 ns 32-VSOP

Buy Now Datasheet
Memory - AT27BV010-12VI - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
AT27BV010-12VI
Memory AT27BV010-12VI
IC EPROM 1MBIT PARALLEL 32VSOP

IC EPROM 1MBIT PARALLEL 32VSOP

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number AT27BV010-12VI AT27BV010-12VI
Product Name Memory Memory
Memory Category EPROM; EPROM EPROM; EPROM
Access Time 120 ns 120 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
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3 suppliers