Microchip Technology, Inc. Memory AT25640B-MAPDGV-E

Description
EEPROM Memory IC 64Kb (8K x 8) SPI 5MHz 8-UDFN (2x3)
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Description
EEPROM Memory IC 64Kb (8K x 8) SPI 5MHz 8-UDFN (2x3)
Request a Quote
Datasheet
Datasheet Summary
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The AT25640B-MAPDGV-E is a 64 Kbit (8,192 x 8) Serial EEPROM from Quarktwin Technology Ltd. It operates using a Serial Peripheral Interface (SPI) and supports SPI Modes 0 and 3. The device is designed for automotive applications, meeting AEC-Q100 standards, and is available in low-voltage (2.5V to 5.5V) and medium-voltage (1.7V to 5.5V) operation grades. The temperature range for Grade 1 is -40¬8C to +125¬8C, while Grade 3 operates from -40¬8C to +85¬8C. This EEPROM features a maximum clock rate of 5 MHz, a 32-byte page mode for efficient data writing, and block write protection options. It includes a write-protect (WP) pin and supports both hardware and software data protection mechanisms. The write cycle is self-timed, with a maximum duration of 5 ms, and the device boasts high reliability with an endurance of 1,000,000 write cycles and a data retention period of 100 years. The product is available in green packaging options, compliant with RoHS standards.

Datasheet Summary
Powered by GS/AI

The AT25640B-MAPDGV-E is a 64 Kbit (8,192 x 8) Serial EEPROM from Quarktwin Technology Ltd. It operates using a Serial Peripheral Interface (SPI) and supports SPI Modes 0 and 3. The device is designed for automotive applications, meeting AEC-Q100 standards, and is available in low-voltage (2.5V to 5.5V) and medium-voltage (1.7V to 5.5V) operation grades. The temperature range for Grade 1 is -40¬8C to +125¬8C, while Grade 3 operates from -40¬8C to +85¬8C. This EEPROM features a maximum clock rate of 5 MHz, a 32-byte page mode for efficient data writing, and block write protection options. It includes a write-protect (WP) pin and supports both hardware and software data protection mechanisms. The write cycle is self-timed, with a maximum duration of 5 ms, and the device boasts high reliability with an endurance of 1,000,000 write cycles and a data retention period of 100 years. The product is available in green packaging options, compliant with RoHS standards.

Suppliers

Company
Product
Description
Supplier Links
Memory - AT25640B-MAPDGV-E-ND - DigiKey
Thief River Falls, MN, United States
EEPROM Memory IC 64Kb (8K x 8) SPI 5MHz 8-UDFN (2x3)

EEPROM Memory IC 64Kb (8K x 8) SPI 5MHz 8-UDFN (2x3)

Buy Now Datasheet
IC EEPROM 64KBIT SPI 5MHZ 8UDFN

IC EEPROM 64KBIT SPI 5MHZ 8UDFN

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - AT25640B-MAPDGV-E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AT25640B-MAPDGV-E
Integrated Circuits (ICs) - Memory AT25640B-MAPDGV-E
IC EEPROM 64KBIT SPI 5MHZ 8UDFN

IC EEPROM 64KBIT SPI 5MHZ 8UDFN

Supplier's Site
Memory - AT25640B-MAPDGV-E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 64Kbit SPI 5 MHz 8-UDFN (2x3)

EEPROM Memory IC 64Kbit SPI 5 MHz 8-UDFN (2x3)

Buy Now Datasheet

Technical Specifications

  DigiKey Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number AT25640B-MAPDGV-E-ND AT25640B-MAPDGV-E AT25640B-MAPDGV-E AT25640B-MAPDGV-E
Product Name Memory Memory Integrated Circuits (ICs) - Memory Memory
Memory Category EEPROM EEPROM; EEPROM EEPROM; Non-Volatile EEPROM; EEPROM
Operating Temperature -40 to 125 C (-40 to 257 F) -40 to 125 C (-40 to 257 F) -40 to 125 C (-40 to 257 F)
Package Type 8-UFDFN Exposed Pad 8-UFDFN Exposed Pad
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