Microchip Technology, Inc. Memory AT25010B-MAPD-E

Description
IC EEPROM 1KBIT SPI 5MHZ 8UDFN
Datasheet
Description
IC EEPROM 1KBIT SPI 5MHZ 8UDFN
Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC EEPROM 1KBIT SPI 5MHZ 8UDFN

IC EEPROM 1KBIT SPI 5MHZ 8UDFN

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - AT25010B-MAPD-E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AT25010B-MAPD-E
Integrated Circuits (ICs) - Memory AT25010B-MAPD-E
IC EEPROM 1KBIT SPI 5MHZ 8UDFN

IC EEPROM 1KBIT SPI 5MHZ 8UDFN

Supplier's Site
Memory - AT25010B-MAPD-E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 1Kbit SPI 5 MHz 8-UDFN (2x3)

EEPROM Memory IC 1Kbit SPI 5 MHz 8-UDFN (2x3)

Buy Now Datasheet

Technical Specifications

  Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number AT25010B-MAPD-E AT25010B-MAPD-E AT25010B-MAPD-E
Product Name Memory Integrated Circuits (ICs) - Memory Memory
Memory Category EEPROM; EEPROM EEPROM; Non-Volatile EEPROM; EEPROM
Density 1 kbits 1 kbits 1 kbits
Data Rate 5 MHz
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882745 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Number of Words 512 k
Bits per Word 8 bits
View Details
Memory - PAL16H42AJ/883 - Quarktwin Technology Ltd.
Texas Instruments
View Details
2 suppliers
Memory - MYX4DD3K512M72PBG2 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DDR3
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 4096000 kbits
View Details