Microchip Technology, Inc. Memory AT24CS04-MAHM-E

Description
EEPROM Memory IC 4Kb (512 x 8) I²C 1MHz 550ns 8-UDFN (2x3)
Request a Quote
Description
EEPROM Memory IC 4Kb (512 x 8) I²C 1MHz 550ns 8-UDFN (2x3)
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The AT24CS04-MAHM-E is a 4-Kbit (512 x 8) I¬=C-compatible serial EEPROM from Quarktwin Technology Ltd. It operates within a voltage range of 1.7V to 5.5V and supports multiple I¬=C modes, including standard (100 kHz), fast (400 kHz), and fast mode plus (1 MHz). The device features a unique factory-programmed 128-bit serial number, providing a permanent read-only identifier that is unique across the CS Series of Serial EEPROMs. This EEPROM is designed for industrial applications, with an operating temperature range of -40¬8C to +85¬8C. It includes a write-protect pin for hardware data protection and offers low active (3 mA maximum) and standby (6 OºA maximum) current consumption. The memory supports 16-byte page write mode, allowing partial page writes, and features both random and sequential read modes. The write cycle is self-timed, completing within a maximum of 5 ms, and the device boasts high reliability with an endurance of 1,000,000 write cycles and data retention of up to 100 years. The AT24CS04-MAHM-E is available in various package options, including 8-lead SOIC, 8-lead TSSOP, 8-pad UDFN, and 5-lead SOT23, and is compliant with RoHS standards.

Datasheet Summary
Powered by GS/AI

The AT24CS04-MAHM-E is a 4-Kbit (512 x 8) I¬=C-compatible serial EEPROM from Quarktwin Technology Ltd. It operates within a voltage range of 1.7V to 5.5V and supports multiple I¬=C modes, including standard (100 kHz), fast (400 kHz), and fast mode plus (1 MHz). The device features a unique factory-programmed 128-bit serial number, providing a permanent read-only identifier that is unique across the CS Series of Serial EEPROMs. This EEPROM is designed for industrial applications, with an operating temperature range of -40¬8C to +85¬8C. It includes a write-protect pin for hardware data protection and offers low active (3 mA maximum) and standby (6 OºA maximum) current consumption. The memory supports 16-byte page write mode, allowing partial page writes, and features both random and sequential read modes. The write cycle is self-timed, completing within a maximum of 5 ms, and the device boasts high reliability with an endurance of 1,000,000 write cycles and data retention of up to 100 years. The AT24CS04-MAHM-E is available in various package options, including 8-lead SOIC, 8-lead TSSOP, 8-pad UDFN, and 5-lead SOT23, and is compliant with RoHS standards.

Suppliers

Company
Product
Description
Supplier Links
Memory - AT24CS04-MAHM-ETR-ND - DigiKey
Thief River Falls, MN, United States
EEPROM Memory IC 4Kb (512 x 8) I²C 1MHz 550ns 8-UDFN (2x3)

EEPROM Memory IC 4Kb (512 x 8) I²C 1MHz 550ns 8-UDFN (2x3)

Buy Now Datasheet
IC EEPROM 4KBIT I2C 1MHZ 8UDFN

IC EEPROM 4KBIT I2C 1MHZ 8UDFN

Supplier's Site Datasheet
Memory - AT24CS04-MAHM-E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 4Kbit I²C 1 MHz 550 ns 8-UDFN (2x3)

EEPROM Memory IC 4Kbit I²C 1 MHz 550 ns 8-UDFN (2x3)

Buy Now Datasheet
Eeprom, 4Kbit, -40 To 85Deg C; Memory Size Microchip - 26Y7049 - Newark, An Avnet Company
Chicago, IL, United States
Eeprom, 4Kbit, -40 To 85Deg C; Memory Size Microchip
26Y7049
Eeprom, 4Kbit, -40 To 85Deg C; Memory Size Microchip 26Y7049
EEPROM, 4KBIT, -40 TO 85DEG C; Memory Size:4Kbit; EEPROM Memory Configuration:512 x 8bit; Memory Interface Type:Serial I2C (2-Wire); Clock Frequency:1MHz; Memory Case Style:UDFN; No. of Pins:8Pins; Supply Voltage Min:1.7V RoHS Compliant: Yes

EEPROM, 4KBIT, -40 TO 85DEG C; Memory Size:4Kbit; EEPROM Memory Configuration:512 x 8bit; Memory Interface Type:Serial I2C (2-Wire); Clock Frequency:1MHz; Memory Case Style:UDFN; No. of Pins:8Pins; Supply Voltage Min:1.7V RoHS Compliant: Yes

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - AT24CS04-MAHM-E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
AT24CS04-MAHM-E
Integrated Circuits (ICs) - Memory - Memory AT24CS04-MAHM-E
IC EEPROM 4KBIT I2C 1MHZ 8UDFN

IC EEPROM 4KBIT I2C 1MHZ 8UDFN

Supplier's Site

Technical Specifications

  DigiKey Lingto Electronic Limited Quarktwin Technology Ltd. Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number AT24CS04-MAHM-ETR-ND AT24CS04-MAHM-E AT24CS04-MAHM-E 26Y7049 AT24CS04-MAHM-E
Product Name Memory Memory Memory Eeprom, 4Kbit, -40 To 85Deg C; Memory Size Microchip Integrated Circuits (ICs) - Memory - Memory
Memory Category EEPROM EEPROM; EEPROM EEPROM; EEPROM EEPROM EEPROM; EEPROM
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Package Type 8-UFDFN Exposed Pad 8-UFDFN Exposed Pad UDFN
Supply Voltage 1.7V ~ 5.5V 1.7V ~ 5.5V Surface Mount
Access Time 550 ns 550 ns
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AT25320AN-SQ27T7 - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 40 ns
Density 32 kbits
View Details
Memory - AS4SD16M16 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SDRAM; DRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 128000 kbits
View Details
SDRAM - 2420773P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 20 ns
Number of Words 64000 k
View Details
Integrated Circuits (ICs) - Memory - Memory - 54F189DLQB - Shenzhen Shengyu Electronics Technology Limited
Specs
Memory Category Volatile
Cycle Time 37.5 ns
Density 0 kbits
View Details
2 suppliers