Microchip Technology, Inc. Memory AT24C512BY7-YH-T

Description
EEPROM, 64KX8, Serial, CMOS, PDSO8
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Description
EEPROM, 64KX8, Serial, CMOS, PDSO8
Request a Quote
Datasheet
Datasheet Summary
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The AT24C512BY7-YH-T is a 512Kbit EEPROM memory device from Quarktwin Technology Ltd., organized as 65,536 words of 8 bits each. It operates at low voltage, with a supply range of 1.8V to 3.6V, and is compatible with standard voltage levels from 2.5V to 5.5V. The device features a two-wire serial interface, allowing for bidirectional data transfer at speeds of up to 1 MHz at 2.5V and 400 kHz at 1.8V. It includes a write protect pin for data protection and supports 128-byte page write mode, enabling partial page writes. The write cycle is self-timed with a maximum duration of 5 ms, and the device boasts a high endurance of 1,000,000 write cycles and a data retention period of 40 years. The AT24C512BY7-YH-T is available in various package types, including an 8-lead Ultra Thin Small Array (SAP) package. This product is not recommended for new designs, as it has been replaced by the AT24C512C.

Datasheet Summary
Powered by GS/AI

The AT24C512BY7-YH-T is a 512Kbit EEPROM memory device from Quarktwin Technology Ltd., organized as 65,536 words of 8 bits each. It operates at low voltage, with a supply range of 1.8V to 3.6V, and is compatible with standard voltage levels from 2.5V to 5.5V. The device features a two-wire serial interface, allowing for bidirectional data transfer at speeds of up to 1 MHz at 2.5V and 400 kHz at 1.8V. It includes a write protect pin for data protection and supports 128-byte page write mode, enabling partial page writes. The write cycle is self-timed with a maximum duration of 5 ms, and the device boasts a high endurance of 1,000,000 write cycles and a data retention period of 40 years. The AT24C512BY7-YH-T is available in various package types, including an 8-lead Ultra Thin Small Array (SAP) package. This product is not recommended for new designs, as it has been replaced by the AT24C512C.

Suppliers

Company
Product
Description
Supplier Links
 - AT24C512BY7-YH-T - Rochester Electronics
Newburyport, MA, United States
EEPROM, 64KX8, Serial, CMOS, PDSO8

EEPROM, 64KX8, Serial, CMOS, PDSO8

Supplier's Site Datasheet
Memory - AT24C512BY7-YH-T-ND - DigiKey
Thief River Falls, MN, United States
EEPROM Memory IC 512Kb (64K x 8) I²C 1MHz 900ns 8-UDFN (6x4.9)

EEPROM Memory IC 512Kb (64K x 8) I²C 1MHz 900ns 8-UDFN (6x4.9)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - AT24C512BY7-YH-T - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
AT24C512BY7-YH-T
Integrated Circuits (ICs) - Memory - Memory AT24C512BY7-YH-T
IC EEPROM 512KBIT I2C 1MHZ 8UDFN

IC EEPROM 512KBIT I2C 1MHZ 8UDFN

Supplier's Site
IC EEPROM 512KBIT I2C 1MHZ 8UDFN

IC EEPROM 512KBIT I2C 1MHZ 8UDFN

Supplier's Site Datasheet
Memory - AT24C512BY7-YH-T - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 512Kbit I²C 1 MHz 900 ns 8-UDFN (6x4.9)

EEPROM Memory IC 512Kbit I²C 1 MHz 900 ns 8-UDFN (6x4.9)

Buy Now Datasheet
Memory - AT24C512BY7-YH-T - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 512Kbit I²C 1 MHz 900 ns 8-UDFN (6x4.9)

EEPROM Memory IC 512Kbit I²C 1 MHz 900 ns 8-UDFN (6x4.9)

Buy Now Datasheet

Technical Specifications

  Rochester Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number AT24C512BY7-YH-T AT24C512BY7-YH-T-ND AT24C512BY7-YH-T AT24C512BY7-YH-T AT24C512BY7-YH-T
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category EEPROM EEPROM EEPROM; Non-Volatile EEPROM; EEPROM EEPROM; EEPROM
Logic Family CMOS
Package Type SOLCC8 8-UDFN Exposed Pad 8-UDFN Exposed Pad
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Supply Voltage 1.8V ~ 3.6V Surface Mount 3.6V; 1.8V ~ 3.6V
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