Microchip Technology, Inc. Memory AT24C256C-MAPD-E

Description
EEPROM Memory IC 256Kb (32K x 8) I²C 400kHz 900ns 8-UDFN (2x3)
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Description
EEPROM Memory IC 256Kb (32K x 8) I²C 400kHz 900ns 8-UDFN (2x3)
Request a Quote
Datasheet
Datasheet Summary
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The AT24C256C-MAPD-E is a 256-Kbit (32,768 x 8) I¬=C-compatible EEPROM memory device designed for automotive applications. It operates within a voltage range of 1.7V to 5.5V, making it suitable for low-voltage and medium-voltage applications. The device is qualified according to AEC-Q100 standards, ensuring reliability in automotive environments with an extended temperature range of -40¬8C to +85¬8C. This memory chip features a bidirectional data transfer protocol and supports both standard (100 kHz) and fast (400 kHz) I¬=C modes. It includes a write-protect pin for hardware data protection and offers a low active current of 3 mA maximum, with a standby current of just 6 OºA. The AT24C256C-MAPD-E supports a 64-byte page write mode, allowing for partial page writes, and has a self-timed write cycle time of up to 5 ms. With an endurance of 1,000,000 write cycles and a data retention period of 100 years, this EEPROM is designed for high reliability and longevity. The device is available in multiple package options, including 8-Lead SOIC, 8-Lead TSSOP, and 8-Pad UDFN.

Datasheet Summary
Powered by GS/AI

The AT24C256C-MAPD-E is a 256-Kbit (32,768 x 8) I¬=C-compatible EEPROM memory device designed for automotive applications. It operates within a voltage range of 1.7V to 5.5V, making it suitable for low-voltage and medium-voltage applications. The device is qualified according to AEC-Q100 standards, ensuring reliability in automotive environments with an extended temperature range of -40¬8C to +85¬8C. This memory chip features a bidirectional data transfer protocol and supports both standard (100 kHz) and fast (400 kHz) I¬=C modes. It includes a write-protect pin for hardware data protection and offers a low active current of 3 mA maximum, with a standby current of just 6 OºA. The AT24C256C-MAPD-E supports a 64-byte page write mode, allowing for partial page writes, and has a self-timed write cycle time of up to 5 ms. With an endurance of 1,000,000 write cycles and a data retention period of 100 years, this EEPROM is designed for high reliability and longevity. The device is available in multiple package options, including 8-Lead SOIC, 8-Lead TSSOP, and 8-Pad UDFN.

Suppliers

Company
Product
Description
Supplier Links
Memory - AT24C256C-MAPD-E-ND - DigiKey
Thief River Falls, MN, United States
EEPROM Memory IC 256Kb (32K x 8) I²C 400kHz 900ns 8-UDFN (2x3)

EEPROM Memory IC 256Kb (32K x 8) I²C 400kHz 900ns 8-UDFN (2x3)

Buy Now Datasheet
IC EEPROM 256KBIT I2C 8UDFN

IC EEPROM 256KBIT I2C 8UDFN

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - AT24C256C-MAPD-E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AT24C256C-MAPD-E
Integrated Circuits (ICs) - Memory AT24C256C-MAPD-E
IC EEPROM 256KBIT I2C 8UDFN

IC EEPROM 256KBIT I2C 8UDFN

Supplier's Site
Memory - AT24C256C-MAPD-E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 256Kbit I²C 400 kHz 900 ns 8-UDFN (2x3)

EEPROM Memory IC 256Kbit I²C 400 kHz 900 ns 8-UDFN (2x3)

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Technical Specifications

  DigiKey Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number AT24C256C-MAPD-E-ND AT24C256C-MAPD-E AT24C256C-MAPD-E AT24C256C-MAPD-E
Product Name Memory Memory Integrated Circuits (ICs) - Memory Memory
Memory Category EEPROM EEPROM; EEPROM EEPROM; Non-Volatile EEPROM; EEPROM
Operating Temperature -40 to 125 C (-40 to 257 F) -40 to 125 C (-40 to 257 F) -40 to 125 C (-40 to 257 F)
Package Type 8-UFDFN Exposed Pad 8-UFDFN Exposed Pad
Supply Voltage 2.5V ~ 5.5V 2.5V ~ 5.5V 2.5V ~ 5.5V
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