Microchip Technology, Inc. Memory AT24C256C-MAPD-E

Description
EEPROM Memory IC 256Kbit I²C 400 kHz 900 ns 8-UDFN (2x3)
Description
EEPROM Memory IC 256Kbit I²C 400 kHz 900 ns 8-UDFN (2x3)
Datasheet
Datasheet Summary
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The AT24C256C-MAPD-E is a 256-Kbit (32,768 x 8) I¬=C-compatible EEPROM memory device designed for automotive applications. It operates within a voltage range of 1.7V to 5.5V, making it suitable for low-voltage and medium-voltage applications. The device is qualified according to AEC-Q100 standards, ensuring reliability in automotive environments with an extended temperature range of -40¬8C to +85¬8C. This memory chip features a bidirectional data transfer protocol and supports both standard (100 kHz) and fast (400 kHz) I¬=C modes. It includes a write-protect pin for hardware data protection and offers a low active current of 3 mA maximum, with a standby current of just 6 OºA. The AT24C256C-MAPD-E supports a 64-byte page write mode, allowing for partial page writes, and has a self-timed write cycle time of up to 5 ms. With an endurance of 1,000,000 write cycles and a data retention period of 100 years, this EEPROM is designed for high reliability and longevity. The device is available in multiple package options, including 8-Lead SOIC, 8-Lead TSSOP, and 8-Pad UDFN.

Datasheet Summary
Powered by GS/AI

The AT24C256C-MAPD-E is a 256-Kbit (32,768 x 8) I¬=C-compatible EEPROM memory device designed for automotive applications. It operates within a voltage range of 1.7V to 5.5V, making it suitable for low-voltage and medium-voltage applications. The device is qualified according to AEC-Q100 standards, ensuring reliability in automotive environments with an extended temperature range of -40¬8C to +85¬8C. This memory chip features a bidirectional data transfer protocol and supports both standard (100 kHz) and fast (400 kHz) I¬=C modes. It includes a write-protect pin for hardware data protection and offers a low active current of 3 mA maximum, with a standby current of just 6 OºA. The AT24C256C-MAPD-E supports a 64-byte page write mode, allowing for partial page writes, and has a self-timed write cycle time of up to 5 ms. With an endurance of 1,000,000 write cycles and a data retention period of 100 years, this EEPROM is designed for high reliability and longevity. The device is available in multiple package options, including 8-Lead SOIC, 8-Lead TSSOP, and 8-Pad UDFN.

Suppliers

Company
Product
Description
Supplier Links
Memory - AT24C256C-MAPD-E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 256Kbit I²C 400 kHz 900 ns 8-UDFN (2x3)

EEPROM Memory IC 256Kbit I²C 400 kHz 900 ns 8-UDFN (2x3)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - AT24C256C-MAPD-E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AT24C256C-MAPD-E
Integrated Circuits (ICs) - Memory AT24C256C-MAPD-E
IC EEPROM 256KBIT I2C 8UDFN

IC EEPROM 256KBIT I2C 8UDFN

Supplier's Site
IC EEPROM 256KBIT I2C 8UDFN

IC EEPROM 256KBIT I2C 8UDFN

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number AT24C256C-MAPD-E AT24C256C-MAPD-E AT24C256C-MAPD-E
Product Name Memory Integrated Circuits (ICs) - Memory Memory
Memory Category EEPROM; EEPROM EEPROM; Non-Volatile EEPROM; EEPROM
Access Time 900 ns 900 ns 900 ns
Operating Temperature -40 to 125 C (-40 to 257 F) -40 to 125 C (-40 to 257 F)
Density 256 kbits 256 kbits 256 kbits
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