Microchip Technology, Inc. Memory AT24C256C-MAPD-E

Description
EEPROM Memory IC 256Kbit I²C 400 kHz 900 ns 8-UDFN (2x3)
Description
EEPROM Memory IC 256Kbit I²C 400 kHz 900 ns 8-UDFN (2x3)
Datasheet
Datasheet Summary
Powered by GS/AI

The AT24C256C-MAPD-E is a 256-Kbit (32,768 x 8) I¬=C-compatible EEPROM memory device designed for automotive applications. It operates within a voltage range of 1.7V to 5.5V, making it suitable for low-voltage and medium-voltage applications. The device is qualified according to AEC-Q100 standards, ensuring reliability in automotive environments with an extended temperature range of -40¬8C to +85¬8C. This memory chip features a bidirectional data transfer protocol and supports both standard (100 kHz) and fast (400 kHz) I¬=C modes. It includes a write-protect pin for hardware data protection and offers a low active current of 3 mA maximum, with a standby current of just 6 OºA. The AT24C256C-MAPD-E supports a 64-byte page write mode, allowing for partial page writes, and has a self-timed write cycle time of up to 5 ms. With an endurance of 1,000,000 write cycles and a data retention period of 100 years, this EEPROM is designed for high reliability and longevity. The device is available in multiple package options, including 8-Lead SOIC, 8-Lead TSSOP, and 8-Pad UDFN.

Datasheet Summary
Powered by GS/AI

The AT24C256C-MAPD-E is a 256-Kbit (32,768 x 8) I¬=C-compatible EEPROM memory device designed for automotive applications. It operates within a voltage range of 1.7V to 5.5V, making it suitable for low-voltage and medium-voltage applications. The device is qualified according to AEC-Q100 standards, ensuring reliability in automotive environments with an extended temperature range of -40¬8C to +85¬8C. This memory chip features a bidirectional data transfer protocol and supports both standard (100 kHz) and fast (400 kHz) I¬=C modes. It includes a write-protect pin for hardware data protection and offers a low active current of 3 mA maximum, with a standby current of just 6 OºA. The AT24C256C-MAPD-E supports a 64-byte page write mode, allowing for partial page writes, and has a self-timed write cycle time of up to 5 ms. With an endurance of 1,000,000 write cycles and a data retention period of 100 years, this EEPROM is designed for high reliability and longevity. The device is available in multiple package options, including 8-Lead SOIC, 8-Lead TSSOP, and 8-Pad UDFN.

Suppliers

Company
Product
Description
Supplier Links
Memory - AT24C256C-MAPD-E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 256Kbit I²C 400 kHz 900 ns 8-UDFN (2x3)

EEPROM Memory IC 256Kbit I²C 400 kHz 900 ns 8-UDFN (2x3)

Buy Now Datasheet
IC EEPROM 256KBIT I2C 8UDFN

IC EEPROM 256KBIT I2C 8UDFN

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - AT24C256C-MAPD-E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AT24C256C-MAPD-E
Integrated Circuits (ICs) - Memory AT24C256C-MAPD-E
IC EEPROM 256KBIT I2C 8UDFN

IC EEPROM 256KBIT I2C 8UDFN

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number AT24C256C-MAPD-E AT24C256C-MAPD-E AT24C256C-MAPD-E
Product Name Memory Memory Integrated Circuits (ICs) - Memory
Memory Category EEPROM; EEPROM EEPROM; EEPROM EEPROM; Non-Volatile
Access Time 900 ns 900 ns 900 ns
Operating Temperature -40 to 125 C (-40 to 257 F) -40 to 125 C (-40 to 257 F)
Density 256 kbits 256 kbits 256 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 4720BDC - Quarktwin Technology Ltd.
Texas Instruments
Specs
Memory Category RAM
Operating Temperature 0 to 70 C (32 to 158 F)
Density 0 kbits
View Details
2 suppliers
Memory - 71124S15Y - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 15 ns
Density 1000 kbits
View Details
Flash Memory - 1882526 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Bits per Word 8 bits
Package Type SOIC
View Details
Memory - MT5C1008 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details