Atmel Corporation Memory AT24C1024BU4-UU-T

Description
EEPROM Memory IC 1Mbit I²C 1 MHz 550 ns 8-VFBGA (2.47x4.07)
Description
EEPROM Memory IC 1Mbit I²C 1 MHz 550 ns 8-VFBGA (2.47x4.07)
Datasheet
Datasheet Summary
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The AT24C1024BU4-UU-T is a 1Mbit EEPROM memory device from Quarktwin Technology Ltd., organized as 131,072 words of 8 bits each. It operates at low voltages, with a range of 1.8V to 3.6V or 2.5V to 5.5V, making it suitable for low-power applications. The device features a two-wire serial interface with a maximum clock rate of 400 kHz at 1.8V and 1 MHz at higher voltages. It supports both random and sequential read modes, as well as a 256-byte page write mode, allowing for partial page writes. The write protect pin provides hardware and software data protection, while the self-timed write cycle typically takes 5 ms. The memory has a high endurance of 1,000,000 write cycles per page and a data retention period of up to 40 years. The AT24C1024BU4-UU-T is available in various package types, including 8-lead PDIP, SOIC, TSSOP, and dBGA2, accommodating different design requirements. However, it is noted that this part is not recommended for new designs and has been replaced by the AT24CM01.

Datasheet Summary
Powered by GS/AI

The AT24C1024BU4-UU-T is a 1Mbit EEPROM memory device from Quarktwin Technology Ltd., organized as 131,072 words of 8 bits each. It operates at low voltages, with a range of 1.8V to 3.6V or 2.5V to 5.5V, making it suitable for low-power applications. The device features a two-wire serial interface with a maximum clock rate of 400 kHz at 1.8V and 1 MHz at higher voltages. It supports both random and sequential read modes, as well as a 256-byte page write mode, allowing for partial page writes. The write protect pin provides hardware and software data protection, while the self-timed write cycle typically takes 5 ms. The memory has a high endurance of 1,000,000 write cycles per page and a data retention period of up to 40 years. The AT24C1024BU4-UU-T is available in various package types, including 8-lead PDIP, SOIC, TSSOP, and dBGA2, accommodating different design requirements. However, it is noted that this part is not recommended for new designs and has been replaced by the AT24CM01.

Suppliers

Company
Product
Description
Supplier Links
Memory - AT24C1024BU4-UU-T - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 1Mbit I²C 1 MHz 550 ns 8-VFBGA (2.47x4.07)

EEPROM Memory IC 1Mbit I²C 1 MHz 550 ns 8-VFBGA (2.47x4.07)

Buy Now Datasheet
IC EEPROM 1MBIT I2C 1MHZ 8VFBGA

IC EEPROM 1MBIT I2C 1MHZ 8VFBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. ODG (Origin Data Global)
Product Category Memory Chips Memory Chips
Product Number AT24C1024BU4-UU-T AT24C1024BU4-UU-T
Product Name Memory Memory
Memory Category EEPROM; EEPROM EEPROM; EEPROM
Access Time 550 ns 550 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 1000 kbits 1000 kbits
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