The Microchip AT21CS11 is a 1 Kb Serial EEPROM utilizing the Single-Wire bus. Only two pins are needed to access the device: SI/O and GND. The SI/O signal is a combination data and power line, providing power to the device with a parasitic power scheme. The device is organized as one block of 128 x 8 and is optimized for use in consumer and industrial applications where reliable and dependable nonvolatile memory storage is essential. The EEPROM is available in a variety of space-saving packaging options.
The AT21CS11 features a 256-bit Security register which includes a 64-bit serial number. The device also features manufacturer ID support in which the device responds with a unique value for density and revision information.
Additional Features
128 x 8 (1 Kbit)
Single-Wire Compatible
I²C Protocol Structure
Communication through a single I/O pin
High Speed (125 kbps) Mode
Self-Timed Erase and Write Cycles (5 ms max.)
Low Power Consumption
Read current 0.08 mA (Typ), 0.3 mA (Max)
Write current 0.2 mA (Typ), 0.5 mA (Max)
Standby current 0.7 uA (Typ), 2.5 uA (Max)
Software Write Protection
Four independent 256-bit zones
More than 1 million erase/write cycles
Data retention > 100 years
ESD protection > 8000V (HBM)
Factory Programming Available
Available in 8-pin SOIC (150 mil), 3-pin SOT23, 2-pad XSFN, and 4-ball Thin CSP packages.
The Microchip AT21CS11 is a 1 Kb Serial EEPROM utilizing the Single-Wire bus. Only two pins are needed to access the device: SI/O and GND. The SI/O signal is a combination data and power line, providing power to the device with a parasitic power scheme. The device is organized as one block of 128 x 8 and is optimized for use in consumer and industrial applications where reliable and dependable nonvolatile memory storage is essential. The EEPROM is available in a variety of space-saving packaging options.
The AT21CS11 features a 256-bit Security register which includes a 64-bit serial number. The device also features manufacturer ID support in which the device responds with a unique value for density and revision information.
Additional Features
- 128 x 8 (1 Kbit)
- Single-Wire Compatible
- I²C Protocol Structure
- Communication through a single I/O pin
- High Speed (125 kbps) Mode
- Self-Timed Erase and Write Cycles (5 ms max.)
- Low Power Consumption
- Read current 0.08 mA (Typ), 0.3 mA (Max)
- Write current 0.2 mA (Typ), 0.5 mA (Max)
- Standby current 0.7 uA (Typ), 2.5 uA (Max)
- Software Write Protection
- Four independent 256-bit zones
- More than 1 million erase/write cycles
- Data retention > 100 years
- ESD protection > 8000V (HBM)
- Factory Programming Available
- Available in 8-pin SOIC (150 mil), 3-pin SOT23, 2-pad XSFN, and 4-ball Thin CSP packages.
