Microchip Technology, Inc. Memory AT21CS01-SSHM14-T

Description
EEPROM Memory IC 1Kbit I²C, Single Wire 125 kbps 8-SOIC
Datasheet
Description
EEPROM Memory IC 1Kbit I²C, Single Wire 125 kbps 8-SOIC
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - AT21CS01-SSHM14-T - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 1Kbit I²C, Single Wire 125 kbps 8-SOIC

EEPROM Memory IC 1Kbit I²C, Single Wire 125 kbps 8-SOIC

Buy Now Datasheet
IC EEPROM 1KBIT I2C 125KHZ 8SOIC

IC EEPROM 1KBIT I2C 125KHZ 8SOIC

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - AT21CS01-SSHM14-T - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
AT21CS01-SSHM14-T
Integrated Circuits (ICs) - Memory - Memory AT21CS01-SSHM14-T
IC EEPROM 1KBIT I2C 125KHZ 8SOIC

IC EEPROM 1KBIT I2C 125KHZ 8SOIC

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number AT21CS01-SSHM14-T AT21CS01-SSHM14-T AT21CS01-SSHM14-T
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category EEPROM; EEPROM EEPROM; EEPROM EEPROM; Non-Volatile
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 1 kbits 1 kbits 1 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - SMJ44C251B - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category NVRAM; VRAM
Access Time 100 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - JBP28L42MJ - Quarktwin Technology Ltd.
Texas Instruments
Specs
Memory Category PROM; PROM
Access Time 110 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
2 suppliers
Memory - CAT24C128HU3IGT3 - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 400 ns
Density 128 kbits
View Details