Microchip Technology, Inc. Silicon Carbide/Silicon Hybrid Modules APTGLQ80HR120CT3G

Description
Features High speed Trench + Field Stop IGBT 4 IGBT 3: Low voltage drop, Low tail current, Switching frequency up to 20 kHz, Very rugged SiC Schottky Diode (D3, D4): Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Kelvin emitter for easy drive Very low stray inductance High level of integration Internal thermistor for temperature monitoring Benefits Stable temperature behavior Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Easy paralleling due to positive TC of VCEsat Low Profile RoHS compliant Applications Uninterruptible Power Supplies
  • Silicon Carbide/Silicon Hybrid Modules - APTGLQ80HR120CT3G - Richardson RFPD
    Richardson RFPD
Request a Quote Datasheet
Description
Features High speed Trench + Field Stop IGBT 4 IGBT 3: Low voltage drop, Low tail current, Switching frequency up to 20 kHz, Very rugged SiC Schottky Diode (D3, D4): Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Kelvin emitter for easy drive Very low stray inductance High level of integration Internal thermistor for temperature monitoring Benefits Stable temperature behavior Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Easy paralleling due to positive TC of VCEsat Low Profile RoHS compliant Applications Uninterruptible Power Supplies
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide/Silicon Hybrid Modules - APTGLQ80HR120CT3G - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide/Silicon Hybrid Modules
APTGLQ80HR120CT3G
Silicon Carbide/Silicon Hybrid Modules APTGLQ80HR120CT3G
Features High speed Trench + Field Stop IGBT 4 IGBT 3: Low voltage drop, Low tail current, Switching frequency up to 20 kHz, Very rugged SiC Schottky Diode (D3, D4): Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Kelvin emitter for easy drive Very low stray inductance High level of integration Internal thermistor for temperature monitoring Benefits Stable temperature behavior Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Easy paralleling due to positive TC of VCEsat Low Profile RoHS compliant Applications Uninterruptible Power Supplies

Features

  • High speed Trench + Field Stop IGBT 4 IGBT 3: Low voltage drop, Low tail current, Switching frequency up to 20 kHz, Very rugged
  • SiC Schottky Diode (D3, D4): Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF
  • Kelvin emitter for easy drive
  • Very low stray inductance
  • High level of integration
  • Internal thermistor for temperature monitoring

Benefits

  • Stable temperature behavior
  • Solderable terminals for easy PCB mounting
  • Direct mounting to heatsink (isolated package)
  • Low junction-to-case thermal resistance
  • Easy paralleling due to positive TC of VCEsat
  • Low Profile
  • RoHS compliant

Applications

  • Uninterruptible Power Supplies
Supplier's Site Datasheet
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
APTGLQ80HR120CT3G
Discrete Semiconductor Products - Transistors - IGBTs APTGLQ80HR120CT3G
IGBT MODULE 1200V 150A 500W SP3

IGBT MODULE 1200V 150A 500W SP3

Supplier's Site

Technical Specifications

  Richardson RFPD Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Insulated Gate Bipolar Transistors (IGBT)
Product Number APTGLQ80HR120CT3G APTGLQ80HR120CT3G
Product Name Silicon Carbide/Silicon Hybrid Modules Discrete Semiconductor Products - Transistors - IGBTs
Transistor Technology / Material Silicon Carbide
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